Modelling on-chip circular double-spiral stacked inductors for RFICs

Wang, Yin; Pan, S.J.; Li, Le‐Wei; Gan, Yeow-Beng

doi:10.1049/ip-map:20030854

Cited by 14 publications

(5 citation statements)

References 10 publications

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“…Based on S 1 , the on-chip stacked multiloop spiral inductors can be configured. This geometry is different from that studied in [10], where the central single via is used to connect the top and bottom spirals. According to Fig.…”

Section: Topologies Of On-chip Stacked Multiloop Spiral Inductorsmentioning

confidence: 98%

“…Physically, it can be predicted that the combination of the differential topology and PGS technique may be a much better choice for enhancing the performance of most silicon-based passive devices. In circuit designs, on-chip spiral inductors with larger inductance and smaller area are always highly desired, and therefore, two-or multispiral stacked geometries may be considered [8]- [10].…”

mentioning

confidence: 99%

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A Study of On-Chip Stacked Multiloop Spiral Inductors

Yang

Wang

Shi

et al. 2008

IEEE Trans. Electron Devices

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This paper proposes a new differential topology that features a stacked multiloop inductor. Comparative studies of stacked one-to four-loop spiral inductors with and without patterned ground shields (PGSs) for silicon-based radio-frequency integrated circuits (RFICs) were conducted, and lumped-element circuit models were developed for these inductors. The partialelement equivalent-circuit method that can accurately analyze mutual inductive couplings among different spirals in these multiloop geometries was employed for capturing the frequencydependent inductances and resistances of inductors at low frequencies. A good agreement between numerical results and measurements is obtained. It is demonstrated that a stacked multiloop spiral inductor with differential topology and PGS has a larger inductance and a higher Q-factor as compared with the same inductor without differential topology and PGS. This hybrid methodology could provide a promising technique for developing new silicon-based passive devices used in RFICs.

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Section: Topologies Of On-chip Stacked Multiloop Spiral Inductorsmentioning

confidence: 98%

mentioning

confidence: 99%

A Study of On-Chip Stacked Multiloop Spiral Inductors

Yang

Wang

Shi

et al. 2008

IEEE Trans. Electron Devices

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“…A stacked inductor model was investigated in Ref. 6 and a multiple‐coupled model analyzing lateral coupling was reported in Ref. 7.…”

Section: Introductionmentioning

confidence: 99%

Analysis of on‐chipGSGpads coupling effects on laterally‐coupled and double‐stacked inductors in the millimeter‐wave frequency regime

Mawuli

Kang

2023

Int J Numerical Modelling

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On‐chip coupled inductors express huge nonuniform coupling tendencies, especially as frequency increases. This though desirable for wireless/galvanically isolated signal transfer but when mixed with the ground‐signal‐ground (GSG) pad could lead to a misrepresentative of the device's true coupling performance. To determine the coupling between the coupled inductors and that of the GSG pad an integrator analytical model investigating the total coupling effects of the GSG pad on laterally‐coupled and stacked inductors is presented in this study. The model characterizes the lateral and vertical coupling effects using lumped circuit elements with analytical equations. The coupling effects of each component are further decomposed and analyzed as electrical, magnetic, and combined effects. The electrical coupling effect, particularly that of the GSG pad, increases with frequency and impacts significantly on the coupled inductors and the substrate. The mm‐wave frequency characteristics such as skin and proximity effects of the inductors are also modeled by the double RL ladder network. The parameter extraction of the model is based on the measured S‐parameter data. The validation of the proposed model given the measured scattering parameter S21 dB achieves an RMSE of 0.0132 dB at 50 GHz. The inductor typology is most applicable to two‐port networks for impedance matching, cross‐coupled VCOs, and high‐speed communication networks.

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“…Extensive research has been done to model and study the physical characteristics of a single inductor [2]- [6], stacked inductors [7], [8], and transformers [9], but few reports on coupling effects between inductors are available. Previous works on coupled inductors were either based on GaAs substrate [10] or at low frequencies for Si substrate [11], [12].…”

Section: Introductionmentioning

confidence: 99%

Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime

Kang

Tan

Brinkhoff

et al. 2010

IEEE Electron Device Lett.

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Coupling effects between on-chip spiral inductors operating in the millimeter-wave (mm-wave) regime have been investigated. The trend of the coupling factor as a function of inductor spacing and number of turns is found, and the implications of this for radio-frequency (RF) and mm-wave circuit layout are discussed. A series of coupled circular spiral inductors with different number of turns and distance was fabricated in a 0.18-μm CMOS process and measured up to 65 GHz. A new SPICE-compatible scalable equivalent circuit model for coupled inductors on silicon is also developed and verified by measurements. The model can help RF and mm-wave circuit designers to characterize the coupling effects of neighboring inductors, optimize layout to save expensive chip area, and achieve first-pass silicon success.Index Terms-CMOS, coupled inductors, coupling effects, millimeter-wave (mm-wave) integrated circuit (IC), mutual inductance, radio-frequency integrated circuit (RFIC), scalable model, π-model.

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Modelling on-chip circular double-spiral stacked inductors for RFICs

Cited by 14 publications

References 10 publications

A Study of On-Chip Stacked Multiloop Spiral Inductors

A Study of On-Chip Stacked Multiloop Spiral Inductors

Analysis of on‐chipGSGpads coupling effects on laterally‐coupled and double‐stacked inductors in the millimeter‐wave frequency regime

Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime

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