Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

“…Ziani and Belkaid reported similar performance of ZnO/Si solar cell using SCAPS-1D software [14]. Very recently, Vallisree et al used Silvaco ATLAS simulator and reported that efficiency up to 14.46% can be achieved by incorporation of Mg in ZnO [15]. Askari et al provided an interesting study on the interface properties of ZnO/Si heterojunction and computed ~14% efficiency of ZnO/Si solar cell using TCAD simulations [16].…”

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

“…[ 17 ] This property, in combination with a high transparency in the visible light spectrum, renders ZnO to be a so called transparent conductive oxide (TCO) [ 18 ] and enables its usage as a buffer layer in solar cells. [ 19–21 ] At the same time crystalline ZnO has a high density of 5.61 g cm −3 [ 22 ] and can function as a gas barrier layer (GBL), thereby protecting moisture and air sensitive layers in a potential application. [ 23 ]…”

Modeling and performance optimization of two‐terminal Cu 2 ZnSnS 4 –silicon tandem solar cells

“…Initially, the CZTS cell comprises of Al/AZO/i‐ZnO/CdS/CZTS/Mo layers and silicon solar cell comprises of Al/silicon/MgZnO/AZO layers are designed in accordance with the experimental structures reported in Reference 17 and sample C 18 of respectively. Silicon/MgZnO is chosen for this study as it forms a better heterojunction with silicon when compared to zinc oxide (ZnO) thin film material 19 . The material, defect, and recombination parameters used in the modeling of both sub‐cells are listed in Table 1.…”

“…The CZTS acceptor concentration which is approximately 10 16 cm −3 is raised to 3.5 × 10 16 cm −3 and interface recombination velocity (IRV) value of 5 × 10 6 cm/s are considered as fitting parameters, and the simulated solar cell parameters are in close agreement with experimental results (Table 2). For the Si/MgZnO solar cell design, the optimized composition of Mg in MgZnO ternary compound semiconductor is assumed to be 20% according to 25 and the band gap is obtained using Vegard's law 19 with bowing parameter b = 2.05 is considered in accordance to the MgZnO wurtzite structure 31 . The model is validated by comparison with experiment in Table 2.…”

“…The optimized concentration of Mg‐doped ZnO material for Si/MgZnO design is 10 19 cm −3. 19 Hence, the bottom cell is optimized for MgZnO concentration, and favorable performance is observed in terms of V oc and FF values owing to the development of stronger field sweeping more carriers across the heterojunction. The solar cell parameters are extracted, and efficiency has been increased to 20.17% as evident from Table 4 and Figure 10.…”