Modelling the effects of distributed series resistance on Suns-V&lt;inf&gt;oc&lt;/inf&gt;, m-V&lt;inf&gt;oc&lt;/inf&gt; and J&lt;inf&gt;sc&lt;/inf&gt;-Suns curves of solar cells

Kunz, Oliver; Varlamov, Sergey; Aberle, A.G.

doi:10.1109/pvsc.2009.5411707

Cited by 7 publications

(3 citation statements)

References 12 publications

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“…While awareness of varying bulk lifetime with injection level is common, an empirically measured ILD lifetime is rarely utilized. Other mechanisms, such as a distributed series resistance , have been described or employed in order to fit a one or two‐diode model to real cell responses.…”

Section: Boundary + Injection‐level‐dependent Lifetime Modelmentioning

confidence: 99%

“…However, as others have pointed out, the magnitude of recombination in the SCR for a non‐defective, high efficiency cell is negligible and therefore cannot account for the observed J 02 . Other suspects for the source of the J 02 component have been edge recombination and distributed series resistance .…”

Section: Boundary + Injection‐level‐dependent Lifetime Modelmentioning

confidence: 99%

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Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Hieslmair

Appel

Kasthuri

et al. 2016

Progress in Photovoltaics

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The injection‐level‐dependent (ILD) lifetime of the silicon wafer impacts many characteristics of the final photovoltaic cell. While efficiency is commonly understood to be impacted by the silicon bulk lifetime (at the maximum power point injection level), this work demonstrates the wide ranging impacts of ILD lifetime on the Voc, the fill factor (FF), the diode ideality factor m, and the dim light response. Instead of a two‐diode model, we utilize a boundary + ILD bulk lifetime model to analyze a commercial passivated emitter rear contact (PERC) cell featuring an AlOx dielectric rear passivation. The ILD lifetime is directly measured and used to calculate the bulk recombination current across injection levels. With this boundary + ILD lifetime model, we demonstrate the role of the ILD lifetime on many cell parameters in this PERC cell. For most high efficiency commercial p‐type monocrystalline solar cells, the typically lower bulk lifetime at the maximum power point versus the lifetime at the open circuit point reduces the measured FF and pseudo‐FF. This work illustrates that for a commercial PERC cell with AlOx rear passivation, the ILD lifetime is the primary mechanism behind reduced FF, ideality factors greater than 1, and the source of the J02 term in the two‐diode model. The crucial implications of this work are not only to better understand commercial PERC cell loss mechanisms but also to encourage a focus on different metrics in cell diagnostics. One such metric is the Voc at 0.1 or 0.05 suns. Copyright © 2016 John Wiley & Sons, Ltd.

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Section: Boundary + Injection‐level‐dependent Lifetime Modelmentioning

confidence: 99%

Section: Boundary + Injection‐level‐dependent Lifetime Modelmentioning

confidence: 99%

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Hieslmair

Appel

Kasthuri

et al. 2016

Progress in Photovoltaics

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show abstract

“…Generally, the n=2 diode (V1>V2) accounts for recombination in the junction space charge region and at grain boundaries, whereas the n=1 diode (V1<V2) accounts for bulk and surface recombination. Detailed explanation on Suns V oc measurement is described in elsewhere [7]. One Suns V oc of 502.4±3.7 mV was resulted from different positions of identically treated films.…”

Section: B Emitter Formationmentioning

confidence: 99%

Material characteristics of crystalline Si thin-film solar cells on glass fabricated by diode laser crystallization

Yun

Huang

Kim

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Diode laser crystallization was performed silicon thin film on glass. Large linear grains along the laser scanning direction were formed when the laser scanning speed of 150-1000 mm/min was used. First order 3 twin boundaries were found to be dominating grain boundaries. Pole figure measurement showed very uniform (100) texture can be formed when SiO x layer capping layer was used. Promising bulk resistivity of the ascrystallized films was resulted. Emitter was formed using spin on diffusion and subsequent RTP. Suns V oc results after emitter formation exhibited n=1 recombination. Hydrogen plasma passivation effectively passivated grain boundaries.

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Indoor Perovskite Photovoltaics for the Internet of Things—Challenges and Opportunities toward Market Uptake

Polyzoidis

Rogdakis

Kymakis

2021

Advanced Energy Materials

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The high‐power conversion efficiency of flexible perovskite photovoltaics (PPV) at low light environment and their low‐cost manufacturing processes, render PPV superior to conventional rigid photovoltaics targeting indoor applications. However, various parameters related to materials, architecture, processing, and indoor characterization need to be optimized further toward improving indoor PPV (iPPV) efficiency, stability, and ecotoxicity. This work provides an overview of the recent progress, trends, and challenges in the field and suggests a holistic approach toward a viable design and integration of iPPVs into Internet of Things (IoT) platforms without any compromise on safety and cost effectiveness. The key impact of selecting proper materials and fabrication techniques, as well as optimizing the active area and architecture is described. Certain peculiarities of the indoor lighting conditions are discussed that can be addressed by proper simulation tools, including the understanding of the charge‐transfer mechanism, the diversification of the lamp types, as well as identifying the requirements for the production, standardization, and installation of iPPVs associated with IoT devices. A multidimensional engineering approach that considers aspects of architecture, light technology, load specifications, materials, processing, safety and cost, is proposed as a path toward accelerating iPPV market uptake for households, businesses, wearables and Industry 4.0 applications.

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Modelling the effects of distributed series resistance on Suns-V<inf>oc</inf>, m-V<inf>oc</inf> and J<inf>sc</inf>-Suns curves of solar cells

Cited by 7 publications

References 12 publications

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Material characteristics of crystalline Si thin-film solar cells on glass fabricated by diode laser crystallization

Indoor Perovskite Photovoltaics for the Internet of Things—Challenges and Opportunities toward Market Uptake

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Modelling the effects of distributed series resistance on Suns-V<inf>oc</inf>, m-V<inf>oc</inf> and J<inf>sc</inf>-Suns curves of solar cells

Cited by 7 publications

References 12 publications

Impact of the injection‐level‐dependent lifetime on Voc, FF, ideality m, J02, and the dim light response in a commercial PERC cell

Impact of the injection‐level‐dependent lifetime on Voc, FF, ideality m, J02, and the dim light response in a commercial PERC cell

Material characteristics of crystalline Si thin-film solar cells on glass fabricated by diode laser crystallization

Indoor Perovskite Photovoltaics for the Internet of Things—Challenges and Opportunities toward Market Uptake

Contact Info

Product

Resources

About

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell

Impact of the injection‐level‐dependent lifetime on V_oc, FF, ideality m, J₀₂, and the dim light response in a commercial PERC cell