Fabrication processes, like die attachment or plastic encapsulation, lead to thermal stresses in micro-assemblies due to CTE mismatches of the involved materials. In this paper, stress-and strain-sensitive test chips were used to measure in situ absolute stresses caused by die attach and encapsulation processes. Furthermore, deformations of assemblies over temperature were observed by white light interferometry and electronic speckle pattern interferometry.Applying these methods, e.g. the effect of entrapped air in thin adhesive layers of die attach assemblies on the absolute stresses in the silicon chip surface could be observed during cure. The resulting stress offset accounted up to 68 % of the thermal stresses at RT in the assembly.
IntroductionAccording to common knowledge, die attach processes of silicon chips on substrates like copper lead frames or BGA interposers lead to high tensile stresses in the chip surface and to a warping of the assembly at room temperature (RT) due to CTE mismatches of the materials [1, 2]. Further on, stress states in the chip surfaces of BGA or PTO packages typically change to high compressive stresses at RT after encapsulation [3,4]. Consequently, stress-sensitive structures like semiconductor Hall-plates in magnetic sensors cause a signal offset or change of sensitivity of the sensors due to the pseudo-Hall effect [4]. The reliability of assemblies is also affected by stress induced phenomena like die cracking, die popping or fatigue cracking in plastic encapsulants [5,6].In this paper, an experimental approach was taken to analyze the influence of glass transition temperature, curing temperature, long term storage at RT, chemical and thermal shrinkage as well as non-linear material behavior of the die attach adhesive and the influence of moisture uptake of package materials on the stress developments in microassemblies.