Modification of emission properties of diamond films due to surface treatment process

Lin, I‐Nan; Chen, Yung-Hsin; Cheng, Hsiu‐Fung

doi:10.1016/s0925-9635(00)00312-5

Cited by 14 publications

(6 citation statements)

References 20 publications

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“…The EFE properties of diamond films were markedly altered when coated with wide-band-gap materials. 12 Even when the surface of a diamond film is bonded with different species, the band structure below the surface is altered, which changes the EFE properties. The type of surface treatment influences the surface conductivity and electron affinity properties.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In addition, the modification of surface characteristics of diamond films plays an important role in enhancing the EFE behavior of the films. The EFE properties of diamond films were markedly altered when coated with wide-band-gap materials . Even when the surface of a diamond film is bonded with different species, the band structure below the surface is altered, which changes the EFE properties.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment

Sankaran¹,

Srinivasu²,

Leou³

et al. 2014

ACS Appl. Mater. Interfaces

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Enhanced electron field emission (EFE) properties due to hydrogen post-treatment at 600 °C have been observed for ultrananocrystalline diamond (UNCD) films. The EFE properties of H2-gas-treated UNCD films could be turned on at a low field of 5.3 V/μm, obtaining an EFE current density of 3.6 mA/cm(2) at an applied field of 11.7 V/μm that is superior to those of UNCD films treated with H2 plasma. Transmission electron microscopic investigations revealed that H2 plasma treatment induced amorphous carbon (a-C) (and graphitic) phases only on the surface region of the UNCD films but the interior region of the UNCD films still contained very small amounts of a-C (and graphitic) grain boundary phases, resulting in a resistive transport path and inferior EFE properties. On the other hand, H2 gas treatment induces a-C (and graphitic) phases along the grain boundary throughout the thickness of the UNCD films, resulting in creation of conduction channels for the electrons to transport from the bottom of the films to the top and hence the superior EFE properties.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment

Sankaran¹,

Srinivasu²,

Leou³

et al. 2014

ACS Appl. Mater. Interfaces

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“…Among the approaches, a thin layer of metallic Fe coating on diamond films, followed by postannealing in H 2 atmosphere significantly improves the EFE properties. [7][8][9] However, the related mechanism for improved EFE properties from these modified surfaces is still not clear.…”

Section: Introductionmentioning

confidence: 99%

Direct observation and mechanism of increased emission sites in Fe-coated microcrystalline diamond films

Panda

Sundaravel

Panigrahi

et al. 2012

Journal of Applied Physics

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The electron field emission (EFE) properties of microcrystalline diamond (MCD) films are significantly enhanced due to the Fe coating and post-annealing processes. The 900 C post-annealed Fe coated diamond films exhibit the best EFE properties, with a turn on field (E 0) of 3.42 V/lm and attain EFE current density (J e) of 170 lA/cm 2 at 7.5 V/lm. Scanning tunnelling spectroscopy (STS) in current imaging tunnelling spectroscopy mode clearly shows the increased number density of emission sites in Fe-coated and post-annealed MCD films than the as-prepared ones. Emission is seen from the boundaries of the Fe (or Fe 3 C) nanoparticles formed during the annealing process. In STS measurement, the normalized conductance dI=dV I=V versus V curves indicate nearly metallic band gap, at the boundaries of Fe (or Fe 3 C) nanoparticles. Microstructural analysis indicates that the mechanism for improved EFE properties is due to the formation of nanographite that surrounds the Fe (or Fe 3 C) nanoparticles. V

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“…The modification on the surface characteristics of diamond for enhancing the EFE process has thus been the main effort of research. 5,[13][14][15] Moreover, the fabrication of diamond nanostructures, such as diamond nanorods, nanopillars, nanocones and nanowhiskers, can increase the fieldenhanced factor and has been observed to improve the EFE properties of diamond films prominently. [16][17][18][19][20][21][22][23][24] However, the process of fabricating these diamond nanostructures often requires a complicated process, which is inefficient and costy.…”

Section: Introductionmentioning

confidence: 99%

Growth of Microcrystalline Diamond Films on Textured Si Substrates to Enhance the Electron Field Emission Properties

Shih¹,

Huang²,

Chen

et al. 2012

Jpn. J. Appl. Phys.

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In this study, we grew a microcrystalline diamond film on a textured Si substrate (MCD/textured Si) and demonstrated the improved electron field emission (EFE) properties of the film. We used a simple wet chemical etching method to fabricate the textured Si substrate and then grew the MCD film by microwave plasma enhanced chemical vapor deposition. Although the Raman spectroscopy profile of the MCD film was essentially unchanged, the surface morphology of the MCD film was altered markedly owing to the utilization of the textured substrate as a template. Hillocks of nanodiamond aggregates, rather than large grain granular structures, were formed for the MCD/textured Si films. The turn-on field for the EFE of the MCD/textured Si film was as small as 3.2 V/µm, with a current density as large as 751 µA/cm2 (at an applied field of 8.8 V/µm). The enhanced EFE properties of the thus-obtained MCD/textured Si film, along with the simplicity and cost-effectivity of the substrate texturing process, renders the MCD/textured Si film a good candidate for application as an electron field emitter.

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Modification of emission properties of diamond films due to surface treatment process

Cited by 14 publications

References 20 publications

Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment

Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment

Direct observation and mechanism of increased emission sites in Fe-coated microcrystalline diamond films

Growth of Microcrystalline Diamond Films on Textured Si Substrates to Enhance the Electron Field Emission Properties

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