2022
DOI: 10.1002/admt.202101487
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Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors

Abstract: In recent years, exciting advances have been achieved in pursuing organic thin film transistors (OTFTs) with high mobility. Whereas, the economical infeasibility of Au source/drain (S/D) electrodes that are widely used in OTFTs hinders the further development of OTFTs in industry. In this study, the modified indium tin oxide (ITO) as S/D electrodes is adopted. The ITO is modified by HCl aqueous solutions, its surface work function is improved from 4.8 to 5.5 eV. By first‐principle calculations and experiments,… Show more

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Cited by 8 publications
(9 citation statements)
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“…As compared, the modification of SAMs induced more amount of O V , which is associated with the combined effect of three factors. First, the increasing amount of In–OH bonds due to the hydroxylation process could induce more O V near the modified surface and the higher binding energy level was attributed to the coexistence of both of them. ,, In addition, the interstitial O 2– were also proven to appear in the same-energy region, such as 531.68 eV. At last, because of the limited detection depth of XPS (a few nanometers), relatively less O L were visible in Au/In 2 O 3 substrates, which also contributed to the decreased percentage of O L in the SAM-functionalized Au/In 2 O 3 NFs .…”
Section: Resultsmentioning
confidence: 99%
“…As compared, the modification of SAMs induced more amount of O V , which is associated with the combined effect of three factors. First, the increasing amount of In–OH bonds due to the hydroxylation process could induce more O V near the modified surface and the higher binding energy level was attributed to the coexistence of both of them. ,, In addition, the interstitial O 2– were also proven to appear in the same-energy region, such as 531.68 eV. At last, because of the limited detection depth of XPS (a few nanometers), relatively less O L were visible in Au/In 2 O 3 substrates, which also contributed to the decreased percentage of O L in the SAM-functionalized Au/In 2 O 3 NFs .…”
Section: Resultsmentioning
confidence: 99%
“…To explore the inherent mechanism of the nitrogenous interlayer modification, we tried to construct a simplified model on the surface of ITO substrate. Based on our previous study about the optimized ITO (001) surface, [ 22 ] a hydroxyl group was introduced on the top of one In atom to simulate the normal ITO surface in the air, as shown in Figure a (the side view of ITO‐OH). Because of the high molecular weight for nitrogenous interlayers, an amine group and an ammonia molecule were used instead to simplify the [N] and [N + ] model, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…[ 31–34 ] After the WF is adjusted to the range of 3.50–5.60 eV, ITO can well match most organic semiconductors (OSCs). [ 17–34 ]…”
Section: Introductionmentioning
confidence: 99%
“…When ITO is treated with halogen solvents, such as chlorobenzene, chloroform, and dichlorobenzene, polarized InCl bonds formed on the surface of ITO will also increase the WF of ITO. [22][23][24] In addition, there are many modification strategies used to reduce the ITO WF. Coated with thin metal-oxide films, such as In 2 O 3 , [25] ZnO, [26] In-doped ZnO, [27] or Al-doped ZnO, [28] ITO WF can be reduced, but not largely.…”
Section: Introductionmentioning
confidence: 99%
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