Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation

Gnatyuk, V. A.; Aoki, Toru; Vlasenko, A. I.; Levytskyi, S. N.; Dauletmuratov, B. K.; Lambropoulos, C.

doi:10.1016/j.apsusc.2009.04.096

Cited by 26 publications

(16 citation statements)

References 14 publications

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“…7 In the case of CdZnTe, it is known that the photoconductivity spectrum of the crystals without surface passivation has a typical D-shape indicating enhanced surface recombination. 11 The D-shape spectra show high photoconductivity near the absorption band edge vanishing in the strong absorption region. Figure 3 shows photoconductance decays measured for the sample of Fig.…”

Section: Methodsmentioning

confidence: 98%

Effect of defect clusters on carrier recombination in high-resistivity CdZnTe

Kamieniecki¹

2013

Journal of Applied Physics

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Section: Methodsmentioning

confidence: 98%

Effect of defect clusters on carrier recombination in high-resistivity CdZnTe

Kamieniecki¹

2013

Journal of Applied Physics

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“…The p-n structured In/CdTe/Au diodes were fabricated by the laser doping technique [11][12][13] . A relatively thick (~400 nm) In film was deposited in vacuum on the B-face (Te-terminated) of CdTe wafers.…”

Section: Sample Preparation and Experimental Detailsmentioning

confidence: 99%

“…However, to obtain a shallow and sharp electrical junction, it needs to provide heavy doping of semi-insulating CdTe that is quite problematic because of self-compensation 9 . We have studied laserinduced doping of high resistivity CdTe crystals with In, and developed diodes with a built-in p-n junction in the surface region [10][11][12][13] . In the paper, the charge transport mechanism in X/γ-ray detectors based on CdTe diodes with a laser-induced p-n junction is studied and ways of optimization of the detection properties are analyzed.…”

Section: Introductionmentioning

confidence: 99%

Charge transport mechanism in CdTe-based p-n junction detectors formed by laser irradiation

et al. 2010

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Charge transport mechanism responsible for leakage current in X/γ-ray detectors with a p-n junction formed in semi-insulating p-like CdTe single crystals by laser-induced doping is studied. The In/CdTe/Au diodes showed high rectification and good spectral response to high-energy radiation, however samples were suffering from an increase in leakage current and deterioration of the characteristics with time. The proposed energy diagram allows to explain the reverse I-V characteristic of the diodes. At low voltages, the Sah-Noyce-Shockley theory describes well both the shape of the I-V characteristic and its temperature changes. At higher voltages, measured currents deviate from the theoretically calculated values toward increasing. An additional current increase is attributed to injection of electrons from the "near-ohmic" Au/CdTe contact and their diffusion to the p-n junction. When the current increases, the drift component is also included in injection of electrons. This leads to a rapid rise in the current contribution with increasing bias voltage and limits possibility to extend the detector active region by increasing the applied voltage.

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“…The surface is very sensitive to both surface processing and ambient conditions. The CdTe crystals are commonly treated by chemical etching and also other surface processing techniques as an ion bombardment and laser irradiation [1], [2], [7] are used. The surface of CdTe crystals is very sensitive to both surface processing and ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Characterization of functional layers of CdTe crystals subjected different surface processing

Gnatyuk

Поперенко

Yurgelevych

et al. 2013

2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC)

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The surface functional layers of commercial detector-grade CdTe crystals after commonly used surface treatments as polishing chemical etching in bromine-containing solutions and laser annealing with nanosecond pulses of the second harmonic of YAG:Nd laser are characterized. Effects of etching and irradiation with energy density near the melting threshold on the CdTe surface properties are studied using ellipsometry and photoluminescence and also crystals after storage in air were used. The intrinsic emission band at 1.56 eV and broad defect band peaked at 1.45 eV are found in the PL spectra, excited by a semiconductor laser with wavelength of 405 nm at 80 K. The emission in 1.45 eV was associated with carrier recombination at the defects in the surface region, so called the surface state band.

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Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiation

Cited by 26 publications

References 14 publications

Effect of defect clusters on carrier recombination in high-resistivity CdZnTe

Effect of defect clusters on carrier recombination in high-resistivity CdZnTe

Charge transport mechanism in CdTe-based p-n junction detectors formed by laser irradiation

Characterization of functional layers of CdTe crystals subjected different surface processing

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