Modifications in structural and electrical properties of gamma irradiated CdSe nanowires

Kumari, Manju; Rana, Pallavi; Chauhan, R. P.

doi:10.1016/j.nima.2014.03.062

Cited by 29 publications

(3 citation statements)

References 23 publications

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“…The NCs also offer adjustable bandgaps and high quantum efficiency benefits and overcome the charge–transport pathway limits of organic semiconductor interfaces by forming additional percolation paths. The various types of NCs, such as QDs, NWs, and NPLs, are used for radiation detectors and consist of common semiconductor materials, such as group II–VI (e.g., cadmium selenide (CdSe) [ 15 , 16 , 17 ] and cadmium telluride (CdTe) [ 18 , 19 ]), IV–VI (e.g., lead sulfide (PbS) [ 20 ]), and III–V (e.g., indium phosphide (InP) [ 21 ] and gallium arsenide (GaAs) [ 22 ]). Metal oxide NCs have been applied to direct-type radiation detectors.…”

Section: Introductionmentioning

confidence: 99%

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

Lee

Liu

Kang

2020

Sensors

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In this paper, we studied the optimized conditions for adding inorganic quantum dots (QD) to the P3HT:PC70BM organic active layer to increase the sensitivity of the indirect X-ray detector. Commonly used QDs are composed of hazardous substances with environmental problems, so indium phosphide (InP) QDs were selected as the electron acceptor in this experiment. Among the three different sizes of InP QDs (4, 8, and 12 nm in diameter), the detector with 4 nm InP QDs showed the highest sensitivity, of 2.01 mA/Gy·cm2. To further improve the sensitivity, the QDs were fixed to 4 nm in diameter and then the amount of QDs added to the organic active layer was changed from 0 to 5 mg. The highest sensitivity, of 2.26 mA/Gy·cm2, was obtained from the detector with a P3HT:PC70BM:InP QDs (1 mg) active layer. In addition, the highest mobility, of 1.69 × 10−5 cm2/V·s, was obtained from the same detector. Compared to the detector with the pristine P3HT:PC70BM active layer, the detector with a P3HT:PC70BM:InP QDs (1 mg) active layer had sensitivity that was 61.87% higher. The cut-off frequency of the P3HT:PC70BM detector was 21.54 kHz, and that of the P3HT:PC70BM:InP QDs (1 mg) detector was 26.33 kHz, which was improved by 22.24%.

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Section: Introductionmentioning

confidence: 99%

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

Lee

Liu

Kang

2020

Sensors

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“…The analysis of literature data has revealed some complex studies on the effect of accelerated light and heavy ions on nanostruc tures transport properties synthesized in channels of polymer track membranes. The group of authors presents the results of studying of nanostructures based on Cu [29][30][31], CdSeO 3 [32] with the irradiation of ions with very high energy (about 2.5-4 MeV/nucleon). Then it was followed by investigation of properties of metallic nanostructures without removing the polymer matrix.…”

Section: Introductionmentioning

confidence: 99%

Study of irradiation effect of Xe⁺²²and Kr⁺¹⁴ions on structural properties of Zn nanotubes

Zdorovets

Kadyrzhanov²,

Kenzhina³

et al. 2018

J. Phys.: Condens. Matter

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The paper presents the results of synthesis and directed modification of structural properties of Zn nanotubes by irradiating with heavy ions. The nanotubes were obtained by electrochemical deposition in pores of template polymer matrices. It was established using SEM, XRD and EDS methods where irradiation with Xe and Kr ions makes it possible to modify the crystal structure of nanotubes. As a result of irradiation with Xe ions, partial destruction of nanotubes is observed, which indicates an increase in the number of defects in the structure and a decrease in strength properties. Change in the crystal structure parameters is observed when irradiation with Kr ions with fluence below 5 × 10 ion cm. That indicates the possibility of using Kr ions for directional modification of nanostructures, while irradiation with Xe ions leads to amorphization and destruction of nanotubes.

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“…A number of experiments were carried out by different groups to investigate the influence of radiation on the properties of thin films and bulk materials [13,14], but comparatively less evidences [15][16][17] are found in literature that provide the evidence of irradiation induced modifications in the properties of the semiconducting nanowires. In this context, present study is focused on the effect of lithium (Li 3? )…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

Rana

Chauhan

2014

J Mater Sci: Mater Electron

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Present study is related to the synthesis of cadmium selenate nanowires via template-assisted electrodeposition approach and their characterization before and after lithium (Li 3? ) ion beam irradiation. Energy-dispersive X-ray analysis and X-ray diffraction study confirmed the synthesis of cadmium selenate nanowires with monoclinic structure. Electrical properties were examined with current-voltage (I-V) source meter using two-probe method. The electrical conductivity augmentation was perceptible for semiconducting nanowires with the increase in the ion beam fluence. The band gap of pristine nanowires was found to be 1.96 eV, while the red shift was observed in the optical band gap of ion irradiated nanowires and it approaches to the value of 1.31 eV at last fluence. In XRD spectra, no evidence was found of phase change or shifting in '2h' position or evolution of any new peak. However, variation in the peak intensities was noticed that could be the result of movement of plane orientation. This study revealed that the defects induced by the ion irradiation and variation in potential gradient with fluence plays a major role in the alteration of the optical and electrical properties of the semiconducting nanowires.

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Modifications in structural and electrical properties of gamma irradiated CdSe nanowires

Cited by 29 publications

References 23 publications

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

Study of irradiation effect of Xe⁺²²and Kr⁺¹⁴ions on structural properties of Zn nanotubes

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

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Modifications in structural and electrical properties of gamma irradiated CdSe nanowires

Cited by 29 publications

References 23 publications

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

A Study on an Organic Semiconductor-Based Indirect X-ray Detector with Cd-Free QDs for Sensitivity Improvement

Study of irradiation effect of Xe+22and Kr+14ions on structural properties of Zn nanotubes

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

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Study of irradiation effect of Xe⁺²²and Kr⁺¹⁴ions on structural properties of Zn nanotubes