2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) 2017
DOI: 10.1109/elnano.2017.7939809
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Modified approach for EMI estimation of integrated class D amplifiers

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Cited by 3 publications
(1 citation statement)
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“…The reason is that the simulation model produces significant spikes of drain currents at the beginning of transistors turning on. In [95], a simple method for the conductive EMI modeling of integrated Class D amplifiers is shown. However, the work does not consider the control circuits of GaN transistors.…”
Section: Emimentioning
confidence: 99%
“…The reason is that the simulation model produces significant spikes of drain currents at the beginning of transistors turning on. In [95], a simple method for the conductive EMI modeling of integrated Class D amplifiers is shown. However, the work does not consider the control circuits of GaN transistors.…”
Section: Emimentioning
confidence: 99%