EMI simulation of GaN power stage for audio class D amplifiers

Gedz, Olga; Lazebnyi, Volodymyr Semenovych; Onikienko, Yuri; Vlasjuk, Anna

doi:10.1109/tcset.2018.8336187

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…Compared with the Si MOSFET, the full-speed (more than 100 MHz) GaN device increases the EMI to 10 dB. Some EMI reduction schemes are proposed, such as selecting the original [94], modifying the topology of the converter circuit [90], or improving the filter [93]. The research on audio amplifiers is still insufficient at present:…”

Section: Emimentioning

confidence: 99%

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The Class D Audio Power Amplifier: A Review

Mei

Hu²,

Xu³

et al. 2022

Electronics

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Class D power amplifiers, one of the most critical devices for application in sound systems, face severe challenges due to the increasing requirement of smartphones, digital television, digital sound, and other terminals. The audio power amplifier has developed from a transistor amplifier to a field-effect tube amplifier, and digital amplifiers have made significant progress in circuit technology, components, and ideological understanding. The stumbling blocks for a successful power amplifier are low power efficiency and a high distortion rate. Therefore, Class D audio amplifiers are becoming necessary for smartphones and terminals due to their power efficiency. However, the switching nature and intrinsic worst linearity of Class D amplifiers compared to linear amplifiers make it hard to dominate the market for high-quality speakers. The breakthrough arrived with the GaN device, which is appropriate for fast-switching and high-power-density power electronics switching elements compared with traditional Si devices, thus, reducing power electronic systems’ weight, power consumption, and cost. GaN devices allow Class D audio amplifiers to have high fidelity and efficiency. This paper analyzes and discusses the topological structure and characteristics and makes a judgment that Class D amplifiers based on GaN amplifiers are the future development direction of audio amplifiers.

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Section: Emimentioning

confidence: 99%

“…In [94], audio amplifiers were built using the SPICE models of fundamental drivers and GaN transistors, which allow an accurate GaN power stage. Moreover, the paper hypothesizes that the model and the object may not be accurate; this error occurs in the low-frequency band.…”

Section: Emimentioning

confidence: 99%

The Class D Audio Power Amplifier: A Review

Mei

Hu²,

Xu³

et al. 2022

Electronics

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“…There are two main research topics on conductive EMI, conductive EMI suppression methods and EMI models of electrical circuits. The EMI mechanism of high-frequency converters can be analysed using these high-frequency models and predictive simulation tools [10,[19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

A review on recent effort of conductive EMI suppression methods in high‐frequency power converters

Xu³

et al. 2022

IET Power Electronics

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High‐frequency power converters with high switching frequency and compact layout are characterised by high power density and high efficiency, which is superior to conventional converters in many aspects. However, the management of electromagnetic interference (EMI) is a significant limitation for their widespread application. Recent conductive EMI suppression methods are reviewed in this paper. The mechanisms and characteristics of the reviewed methods are discussed in detail. Then, the EMI attenuation of the mentioned methods is compared from the perspective of attenuation band, attenuation amplitude, and cost respectively. It is demonstrated that both the source and the propagation path have a significant impact on EMI problems in performance of high‐frequency power converters. Several suggestions can be proposed based on the reviewed researches. Firstly, both the potential matching method and the balance winding method in transformer design can achieve a significant EMI reduction at all frequencies within the frequency range of conducted EMI. Secondly, spread‐spectrum modulation techniques are suggested to be applied in MHz converters instead of constant frequency control. Thirdly, the reviewed gate driver optimisation methods have a remarkable EMI suppression effect at high frequencies and still work for the suppression of radiated EMI. Finally, filters can have a reduced volume if the reviewed methods are applied.

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“…1) at the right switching angles with fast switching devices like GaN. However, parasitic inductances and capacitances in the stray path and device package increase the overshoot voltage at the gate of power devices in a short rising time, which poses a risk for device breakdown and electromagnetic interference (EMI) generation [6]. Therefore, the SHEPWM CDA used a reconfigurable gate driver integrated circuit (IC) from [3] to adjust the gate driver's driving strength to control the rising/falling time of both gate and switching node voltages.…”

Section: Introductionmentioning

confidence: 99%

SHEPWM Class-D Amplifier with a Reconfigurable Gate Driver Integrated Circuit

Aimaier

Nobert

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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A selective harmonic elimination pulse width modulation (SHEPWM) class-D amplifier (CDA) with a reconfigurable gate driver integrated circuit (IC) is proposed. The H-bridge CDA generates a three-level SHEPWM signal and cancels lower order harmonics of the switching voltage. To generate accurate pulses at the right switching angles, GaN devices are used and a reconfigurable gate driver IC is used to control the driving strength of the gate driver. The SHEPWM algorithm is implemented in an FPGA and can configure the output on-the-fly. The simulation results show that the SHEPWM CDA has a 0.48 % total harmonic distortion (THD) for a 10 kHz output with an estimated switching loss of 38 mW for a GaN power transistor. It also shows that the driving strength of the gate driver has very little effect on THD, therefore the driving strength can be optimized between overshoot voltage and switching loss without concern for THD.

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EMI simulation of GaN power stage for audio class D amplifiers

Cited by 5 publications

References 9 publications

The Class D Audio Power Amplifier: A Review

The Class D Audio Power Amplifier: A Review

A review on recent effort of conductive EMI suppression methods in high‐frequency power converters

SHEPWM Class-D Amplifier with a Reconfigurable Gate Driver Integrated Circuit

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