A selective harmonic elimination pulse width modulation (SHEPWM) class-D amplifier (CDA) with a reconfigurable gate driver integrated circuit (IC) is proposed. The H-bridge CDA generates a three-level SHEPWM signal and cancels lower order harmonics of the switching voltage. To generate accurate pulses at the right switching angles, GaN devices are used and a reconfigurable gate driver IC is used to control the driving strength of the gate driver. The SHEPWM algorithm is implemented in an FPGA and can configure the output on-the-fly. The simulation results show that the SHEPWM CDA has a 0.48 % total harmonic distortion (THD) for a 10 kHz output with an estimated switching loss of 38 mW for a GaN power transistor. It also shows that the driving strength of the gate driver has very little effect on THD, therefore the driving strength can be optimized between overshoot voltage and switching loss without concern for THD.

This paper presents a compact configurable power control system for safety-critical applications, which operates in harsh environments. This heterogeneous integrated mixed digital, analog and high-voltage design for power applications is implemented in a system-in-package (SiP) module using a lowtemperature co-fired ceramics (LTCC) substrate. A comparison between technologies for SiP designs shows that LTCC is advantageous in terms of integration density, thermal and electrical performances, as well as signal and power integrity. In addition, this work proposes layout and fabrication techniques for the enhancement of thermal, electrical performances and integration density specific to LTCC-based designs, such as chipcovering, multi-layer routing of power signals and self-damped transmission lines. An improvement of 59% in available area, 32% reduction of temperature due to self-heating, 65% loss reduction and 22% reduction in interference coupling were obtained when compared to a baseline design.

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