Modified derivative superposition method for linearizing FET low noise amplifiers

Aparin, V.; Larson, L.E.

doi:10.1109/rfic.2004.1320540

Cited by 57 publications

(76 citation statements)

References 9 publications

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“…To compare the proposed LNA with the other reported UWB LNAs, we have used the figure of merit, FOM , defined as FOM = OIP 3/{(NF − 1) × P dc }, [3]. The simulation results as well as the FOM of the proposed LNA are summarized in Table I.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…This fact together the other limitations of the submicron CMOS designs make the linearization techniques a necessity to achieve the higher linearity in RF receivers. The optimum gate biasing and the usage of nonlinear elements for compensating the distortion of the main transistor are the common trends toward the distortion canceling [3]. In the second technique, the nonlinearity of an additional transistor which is usually biased in the weak inversion region is employed to compensate or even to cancel the nonlinearity of the main transistor which should be biased in the strong inversion region.…”

Section: Linearity Analysismentioning

confidence: 99%

“…1 (c). For linearity analysis, we followed the same procedure as [2,3]. First, we considered the CG input stage.…”

Section: Linearity Analysismentioning

confidence: 99%

“…According to [3], for a two tone excitation as V s = A{cos(ω a t) + cos(ω b t)} and setting s 1 = s 2 = s b and s 3 = −s a , the IIP3 is defined as Eq. (12).…”

Section: Linearity Analysismentioning

confidence: 99%

“…18). This is done by trimming the V gs of transistor M 5 which is biased in the weak inversion region as also suggested in [3].…”

Section: Linearity Analysismentioning

confidence: 99%

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A linear current-reused LNA for 3.1-10.6GHz UWB receivers

Mirvakili

Yavari

Raissi

2008

IEICE Electron. Express

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An ultra-wide-band CMOS low-noise amplifier (LNA) employing a common-gate (CG) stage for wideband input matching is presented. This LNA utilizes the concurrent noise and distortion canceling techniques. Moreover, the current-reused technique exploiting the passive network instead of using the active and power consuming element is introduced to preserve the power consumption while contributing to the noise canceling trend. In other words, this topology is capable of canceling the noise effect of input transistor without consuming much current. Simulation results based on a 0.13 μm standard RFCMOS technology shows that a power gain of 13.5 dB and the noise figure of 2.7-4.2 dB over the −3-dB bandwidth of 2.6-10.7 GHz. With the presence of a weak inversion biased transistor, an input third-order intercept point (IIP3) of +5 dBm is achieved. The power consumption is 13.5 mW from a single 1.2 V power supply.

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Linearity Analysismentioning

confidence: 99%

“…1 (c). For linearity analysis, we followed the same procedure as [2,3]. First, we considered the CG input stage.…”

Section: Linearity Analysismentioning

confidence: 99%

“…According to [3], for a two tone excitation as V s = A{cos(ω a t) + cos(ω b t)} and setting s 1 = s 2 = s b and s 3 = −s a , the IIP3 is defined as Eq. (12).…”

Section: Linearity Analysismentioning

confidence: 99%

“…18). This is done by trimming the V gs of transistor M 5 which is biased in the weak inversion region as also suggested in [3].…”

Section: Linearity Analysismentioning

confidence: 99%

See 3 more Smart Citations

A linear current-reused LNA for 3.1-10.6GHz UWB receivers

Mirvakili

Yavari

Raissi

2008

IEICE Electron. Express

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Amplifiers in RF Transceiver for Wireless Communication

Heo,

Upadhyaya,

Rajashekharaiah

2005

Encyclopedia of RF and Microwave Engineering

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Wireless communication entails transmission and reception of data with air and surrounding environment as a communication channel. The channel, in this case the surrounding environment, therefore, dictates the quality of wireless communication. Wireless communication uses radio frequency (RF) as carrier frequency for data transmission and reception. The channel for RF communication (surrounding environment) is lossy, and thus, it is necessary to boost or amplify the signal levels during both transmission and reception. In the transmitter, the power amplifier (PA) is used to boost the signal power levels, and at the receiver, the low noise amplifier (LNA) is used to amplify the weak RF signals. The power amplifier and the low noise amplifier, consequently, dictate the quality of wireless or RF communication and therefore are critical in RF transceiver design.

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A 0.7‐dB NF, +8.2‐dBm IIP3 CMOS low noise amplifier using frequency selective feedback

Jin

Han

Kim

2015

Circuit Theory & Apps

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A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third-and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-μm CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4 mW of power consumption at 900 MHz.(43)When we compare b 3 , the third-order distortion coefficient of the low-frequency feedback (6), with B 3 ( jω b , jω b , À jω a ), that of the high-frequency feedback (34), we find that the second-order CMOS LOW NOISE AMPLIFIER

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Modified derivative superposition method for linearizing FET low noise amplifiers

Cited by 57 publications

References 9 publications

A linear current-reused LNA for 3.1-10.6GHz UWB receivers

A linear current-reused LNA for 3.1-10.6GHz UWB receivers

Amplifiers in RF Transceiver for Wireless Communication

A 0.7‐dB NF, +8.2‐dBm IIP3 CMOS low noise amplifier using frequency selective feedback

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