2012
DOI: 10.1016/j.materresbull.2012.05.058
|View full text |Cite
|
Sign up to set email alerts
|

Modified giant dielectric properties of samarium doped CaCu3Ti4O12 ceramics

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

5
34
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 66 publications
(39 citation statements)
references
References 36 publications
5
34
0
Order By: Relevance
“…Obviously, R gb at 80 • C of CCTO ceramics was greatly reduced by doping with Sm 3+ , while the insulating GB−layer density of the Sm05 ceramic greatly increased due to a large decrease in the mean grain size. This result is similar to that reported in the literature [21]. Conversely, R gb increased slightly when doped with Mg 2+ even though the insulating GB-layer density greatly decreased due to an increase in its mean grain size.…”
Section: Resultssupporting
confidence: 91%
See 3 more Smart Citations
“…Obviously, R gb at 80 • C of CCTO ceramics was greatly reduced by doping with Sm 3+ , while the insulating GB−layer density of the Sm05 ceramic greatly increased due to a large decrease in the mean grain size. This result is similar to that reported in the literature [21]. Conversely, R gb increased slightly when doped with Mg 2+ even though the insulating GB-layer density greatly decreased due to an increase in its mean grain size.…”
Section: Resultssupporting
confidence: 91%
“…Furthermore, abnormal grain growth was clearly observed in the Sm05 ceramic. These results are very similar those seen in a Ca 0.925 Sm 0.05 Cu 3 Ti 4 O 12 ceramic prepared using a SSR method [21]. The large reduction in the mean grain size of the Sm05 ceramic was attributed to the solute drag mechanism [21,29].…”
Section: Resultssupporting
confidence: 84%
See 2 more Smart Citations
“…The degree of electronic device miniaturization utilizing capacitive components is decided by the dielectric constant of a dielectric material [1,2]. The size of such devices can be reduced by replacing dielectric layers with a relatively high-dielectric material.…”
Section: Introductionmentioning
confidence: 99%