Modified simple expression for bandgap narrowing in n-type GaAs

Jain, S.C.; McGregor, J.M.; Roulston, D.J.; Balk, P.

doi:10.1016/0038-1101(92)90030-g

Cited by 21 publications

(12 citation statements)

References 15 publications

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“…2. fitting the results to other well-accepted mobility models for GaAs structures at room temperature [17][18][19], 3. Band gap narrowing due to heavy doping is also taken into account [13]. The band gap shrinkage in GaAs has been demonstrated to be important in order to reproduce measured data and it has a significant impact on p-GaAs while on n-GaAs its impact could be masked by degeneration effects [20], 4.…”

Section: Methodsmentioning

confidence: 99%

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Ochoa¹,

Algora²,

Espinet‐González³

et al. 2014

Solar Energy Materials and Solar Cells

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This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.

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Section: Methodsmentioning

confidence: 99%

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Ochoa¹,

Algora²,

Espinet‐González³

et al. 2014

Solar Energy Materials and Solar Cells

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“…The BGN parameters used for InAs are extracted from a least squares fit to experimental data at moderate N D (2 · 10 17 cm À3 to 2 · 10 18 cm À3 ) presented in [5]. A linear interpolation between the published BGN parameters for GaAs [15], which correlate well with published experimental data, and the previously discussed BGN parameters for InAs is expected to give a reasonable estimate. The inclusion of a bowing parameter corresponding to those of the dielectric constant and effective mass may yield a more accurate estimation, but in the absence of any experimental data, the linearly interpolated values are deemed sufficient.…”

Section: Band Gap Narrowingmentioning

confidence: 98%

“…However, heavily degenerately doped semiconductors (10 18 cm À3 and higher) may suffer as much as a 200 meV bandgap reduction. Unfortunately, the characterization of bandgap narrowing in InP and In 0.53 Ga 0.47 As is not as complete as silicon or even GaAs; therefore, model parameters were based on theory [12], phenomenological expressions [13][14][15], and limited data [5][6][7]. The partitioning of the total bandgap reduction between the conduction and valence bands and the doping dependence of this partitioning is particularly important when simulating HBTs [16].…”

Section: Band Gap Narrowingmentioning

confidence: 99%

Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

Sokolich

Hussain

et al. 2006

Solid-State Electronics

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“…The location of the Fermi level versus doping density has been reported for heavily doped n-GaAs 121 and p-GaAs. 122 ' 123 Jain et al 121 presented experimental values of the Fermi level in n-GaAs obtained by analyzing luminescence data of several workers. Silberman et al 122 have used the X-ray photoemission spectroscopy to deduce the shift in the valence-band-edge induced by carbon doping to a carrier density of lxlO 20 cm' 3 based on a determination of the bulk binding energy of the Ga and As core levels in GaAs.…”

Section: Dopingmentioning

confidence: 99%

Energy-Band Structure: Energy-Band Gaps of Bulk Materials

Adachi¹

1994

GaAs and Related Materials

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The wave function TCr) of the electrons in the crystal lattice is expressed by the well-known Bloch's theorem:where the function U k (r) has the period of the crystal lattice such mat U k (r)=U k (r+T) (here T is any vector of the Bravais lattice). The nearly free-electron approximation is a good standing point for discussing the energy band theory. It explains the origin of the band gap and that of the effective mass m* which is defined as the reciprocal of the curvature of E (energy) versus k (wavevector) diagram. The functional dependence of E on k for the various bands, E"(k), is defined by the Schrodinger equation:HT(r) = _EL + V(r) = E^r) (7.2) 2m* where p 2 /2m* is the kinetic energy (p=-ihV), V(r) is the potential energy, and E is the energy eigenvalue. Since the electrons in the crystal are influenced by the periodic potential, the electron mass m* used in Eq. (7.2) differs largely from the free electron mass m<, (see Chapter 8).The reciprocal space, also called phase space, k-space, and momentum space, is a convenient tool to describe the behavior of both vibrational states and electronic states. The coordinate axes of the reciprocal lattice are the wavevectors of the plane waves corresponding to the vibrational modes (Section 5.

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Modified simple expression for bandgap narrowing in n-type GaAs

Cited by 21 publications

References 15 publications

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

Energy-Band Structure: Energy-Band Gaps of Bulk Materials

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