2006
DOI: 10.1016/j.sse.2006.04.047
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Physical modeling of degenerately doped compound semiconductors for high-performance HBT design

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Cited by 15 publications
(8 citation statements)
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“…The bulk velocity field characteristics are then obtained using (11) and (12). The comparison of the 2v-DD model with BTE data is shown in Fig.…”
Section: A Steady-state Bulk Velocity-field Characteristicsmentioning
confidence: 99%
See 1 more Smart Citation
“…The bulk velocity field characteristics are then obtained using (11) and (12). The comparison of the 2v-DD model with BTE data is shown in Fig.…”
Section: A Steady-state Bulk Velocity-field Characteristicsmentioning
confidence: 99%
“…[7][8][9]) in industry and academia. It has been shown though that the SEG approach does not provide satisfactory results for III-V devices for several reasons [10][11][12][13]. The NDM formulation of the mobility leads to severe convergence problems, prohibiting simulations in the operating region of interest for circuit applications [6,11,14].…”
Section: Introductionmentioning
confidence: 99%
“…The value of DE BM was calculated in pursuance of parabolic−band theory using Eq. (1) -E F parameter, taking into account the effect of a nonparabolic conduction band by introducing the doping dependent electron effective mass m e * according to the third order polynomial empirical model (Poly3x) proposed by James C. Li et al [16] …”
Section: Lp−movpe Growth and Properties Of High Si−doped Ingaas Contamentioning
confidence: 99%
“…In summary, at low and moderate doping concentrations (10 16 cm À3 ), for most of the III-V semiconductors, the change in the bandgap is smaller than the thermal energy. However, heavily doped semiconductors (greater than or equal to 10 18 cm À3 ) may suffer as much as 200 meV bandgap reduction [137,138]. The bandgap narrowing in In 0.53 Ga 0.47 As due to heavy doping concentrations for both donors and acceptors is shown in Fig.…”
Section: Doping Issues In Iii-v Semiconductorsmentioning
confidence: 99%