Recent advances in fluorescence measurements for single molecule spectroscopy, genomics, proteomics and medical diagnostics require single-photon detectors with high quantum efficiency in the extended red spectral range (from 600 nm to 900 nm) and low noise (550 kc s À1 ). Amongst industrial production, avalanche photodiodes with large diameter (up to 500 mm) are available which can work in Geiger mode (GM) with good photon detection efficiency (higher than 20%) and some of them also with quite low dark counting rate. They allow one to attain high collection efficiency with simple optical systems. However, they work at high bias voltage (over 200 V) with high power dissipation and are easily damaged by exposure to intense light. A detector carrier module has been designed for safe operation and full performance exploitation of any silicon device suitable for GM operation, with any breakdown voltage up to 480 V. Efficient photon counting and timing is achieved in a very compact module by means of an integrated active-quenching circuit (iAQC) with fast time pickup. Catastrophic failure is avoided by a dedicated monitor and safety circuit, even in the case of exposure to sunlight.Keywords: single photon counting module; time correlated single photon counting; photon timing; large area detectors; single photon detector carrier; single photon avalanche diodes
IntroductionFluorescence spectroscopy is nowadays widely used as an analytical and research tool in basic and applied life sciences, including genomics, proteomics, bioengineering and medical diagnostics (see [1] for a review). Miniaturized detectors with single photon sensitivity are required in these applications to accommodate the steady trend toward smaller sample volumes, lower excitation intensity and compact, low-cost analytical systems. Planar single photon avalanche diode (SPAD) detectors with a thin depletion region (1-2 mm) fabricated on double epitaxial silicon substrates offer the typical advantages of solid state devices (miniaturization, ruggedness, low voltage, low power, low cost, etc.) along with remarkably good photon timing resolution, i.e. less than 50 ps, full width at half maximum (FWHM), and high photon detection efficiency (PDE) in the visible range ($50% at 550 nm) [2]. The PDE of planar SPADs typically goes from 25% to 5% in the near infra-red (NIR) range from 700 nm to 900 nm. Although this performance is much better than that of photomultiplier tubes equipped with standard S20 or S25 photocathodes [3], there is a considerable need for higher PDE in the NIR range due to the increasing use of fluorescent labels and probes with emission at long wavelengths. The shift toward NIR fluorophores is of current