2021
DOI: 10.1002/adfm.202009515
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Modifying Surface Termination of CsPbI3 Grain Boundaries by 2D Perovskite Layer for Efficient and Stable Photovoltaics

Abstract: It is highly desirable for all‐inorganic perovskite solar cells (PVSCs) to have reduced nonideal interfacial charge recombination in order to improve the performance. Although the construction of a 2D capping layer on 3D perovskite is an effective way to suppress interfacial nonradiative recombination, it is difficult to apply it to all‐inorganic perovskites because of the resistance of Cs+ cesium ions in cation exchange reactions. To alleviate this problem, a simple approach using an ultra‐thin 2D perovskite … Show more

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Cited by 74 publications
(86 citation statements)
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“…The longer lifetime demonstrated the reduced possibility of charge loss through trapping dynamics, which was further evidenced by the space-charge-limited current (SCLC) model. [49,50] Based on the trap-filled limit voltage, the pristine film had the highest trap density of 9.46 × 10 15 cm −3 (Figure S14, Supporting Information), which decreased to 6.85 × 10 15 and 5.98 × 10 15 cm −3 with LDZWs and HDZWs, respectively. This indicates the applicability of zwitterions to realizing highly efficient inorganic PSCs.…”
Section: Resultsmentioning
confidence: 99%
“…The longer lifetime demonstrated the reduced possibility of charge loss through trapping dynamics, which was further evidenced by the space-charge-limited current (SCLC) model. [49,50] Based on the trap-filled limit voltage, the pristine film had the highest trap density of 9.46 × 10 15 cm −3 (Figure S14, Supporting Information), which decreased to 6.85 × 10 15 and 5.98 × 10 15 cm −3 with LDZWs and HDZWs, respectively. This indicates the applicability of zwitterions to realizing highly efficient inorganic PSCs.…”
Section: Resultsmentioning
confidence: 99%
“…As previously reported, the smaller ΔV 2 for the devices prepared with ODAPbI 4 interlayer could be ascribed to the reduced shallow trap states in perovskite. [54,55] ΔV 3 represents the non-radiative recombination loss in PVSCs, which can be determined by function:…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Figure 16a, a prefabricated 2D perovskite layer on the substrate was stacked on the surface of a 3D perovskite film, and then heat and pressure were applied to induce the formation of intact 2D/3D heterojunctions. Thus, an enhanced built-in potential was obtained in the mixed film, leading to OABr ITO/SnO 2 /FAPbI 3 (0.8 mol% MAPbBr 3 )/OAI/Spiro-OMeTAD/Au 25.20% (0.0937 cm 2 ) -CBD of SnO 2 layer [22] OAI TO/TiO 2 /FAPbI 3 /OAI/Spiro-mF/Au 24.82% (0.0819 cm 2 ) >87% of initial PCE, 500 h, 50% RH Modified Spiro-OMeTAD [190] OAI FTO/TiO Doping MACl [192] PEAI ITO/SnO 2 /MA x FA 1-x PbI 3 /PEAI/Spiro-OMeTAD/Au 23.56% (0.0739 cm 2 ) 81% of initial PCE, 500 h, 85 °C, Non [87] tBBAI FTO/TiO Non [193] HTAB FTO/TiO 2 /MAFAPbI x Br 3−x /HTAB/P 3 HT/Au 23.30% (/) 95% of initial PCE, 1370 h 85% RH, 25 °C, 1 sun Non [158] 2-PyEAI ITO/SnO 2 /MA x FA 1-x PbI 3 /2-PyEAI/Spiro-OMeTAD/Au 23.20% (0.1 cm 2 ) 92% of initial PCE, 3000 h 30% RH, 25 °C, air Non [194] CF Non [195] DMAI FTO/TiO 2 /cs 0.05 FA 0.85 MA 0.10 Pb(I 0.97 Br 0.03 ) 3 /DMAI/Spiro-OMeTAD/ MoO 3 /Ag 23% (0.0725 cm 2 ) 80% of initial PCE, 1000 h 30% RH, 25 °C, air Non [196] PI Non [198] OAm [200] PEAI FTO/TiO 2 /CsPbI 3 /PEA 2 PbI 4 /Spiro-OMeTAD/Au 18.82% (0.104 cm 2 ) 81% of initial PCE, 84 h, 40% ± 5% RH Non [201] GABr ITO/SnO 2 /CsPb(Br x I 1-x ) 3 /Spiro-OMeTAD/Au 18.06% (0.103 cm 2 ) 81% of initial PCE, 1000 h, 40% RH, 25 °C SIM method [202] PTABr FTO/TiO 2 /CsPbI 3 /PTABr/Spiro-OMeTAD/Au 17.06% (0.12 cm 2 ) 91% of initial PCE, 500 h, 1 sun, N 2…”
Section: Organic-inorganic Lead Pscs With the Formal Structurementioning
confidence: 99%