Modulated Thermoelectric Properties of Organic Semiconductors Using Field‐Effect Transistors

Zhang, Fengjiao; Zang, Yaping; Huang, Dazhen; Di, Chong‐an; Gao, Xike; Sirringhaus, Henning; Zhu, Daoben

doi:10.1002/adfm.201404397

Cited by 103 publications

(136 citation statements)

References 55 publications

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“…[8] We calculated the carrier concentration by assuming that Bi interfacial chemical doping has al imited effect on mobility owing to the negligible influence of Bi on the molecular packing (Supporting Information, Figures S12 and S13).The pristine TDPPQ film possesses al ow carrier concentration of < 510 16 cm À3 .I nc ontrast, am uch higher carrier concentration of 1.6 10 19 cm À3 is obtained with ad oping level of 2.5 %a fter deposition of 2nmo fB i, which dominates the enhanced electrical conductivity.T his relatively low doping level is consistent with the weak chemical doping feature revealed by the UV/Vis spectra and UPS results.G iven that an increase and ad ecrease in carrier concentration and doping level have negative effects on TE performance,i ti si ndicated that the relatively low doping level of TDPPQ/Bi film is responsible for an outstanding PF. [8] We calculated the carrier concentration by assuming that Bi interfacial chemical doping has al imited effect on mobility owing to the negligible influence of Bi on the molecular packing (Supporting Information, Figures S12 and S13).The pristine TDPPQ film possesses al ow carrier concentration of < 510 16 cm À3 .I nc ontrast, am uch higher carrier concentration of 1.6 10 19 cm À3 is obtained with ad oping level of 2.5 %a fter deposition of 2nmo fB i, which dominates the enhanced electrical conductivity.T his relatively low doping level is consistent with the weak chemical doping feature revealed by the UV/Vis spectra and UPS results.G iven that an increase and ad ecrease in carrier concentration and doping level have negative effects on TE performance,i ti si ndicated that the relatively low doping level of TDPPQ/Bi film is responsible for an outstanding PF.…”

Section: Angewandte Chemiementioning

confidence: 99%

“…[7] Moreover,m any instances of bulk doping lead to ar educed hopping rate because of increased structural disorder. [8] Interfacial doping principally serves as ag ood technique for introducing ab alanced carrier concentration and charge transport property to TE materials, thereby enabling ah igh TE performance.H owever,t he development of efficient interfacial doping is still achallenge. Herein, we demonstrate that Bi, ah eavy metal, can serve as an excellent n-type interfacial dopant for thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules.B y taking advantage of high quality ultra-thin films,t he Bi interfacial doping of TDPPQ yields an unexpectedly high PF of 113 mWm À1 K À2 .T ot he best of our knowledge,t his is arecord value for reported n-type small molecules.The result indicates that well-controlled metal doping of organic semiconductors can provide an excellent way toward high performance n-type TE materials.…”

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Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

et al. 2016

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Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3 S cm(-1) and a Seebeck coefficient of 585 μV K(-1) . The newly developed TE material possesses a maximum power factor of 113 μW m(-1) K(-2) , which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.

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Section: Angewandte Chemiementioning

confidence: 99%

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confidence: 99%

Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

et al. 2016

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“…61,62 Sirringhaus and Zhu have recently investigated how the Seebeck coefficient in p-type pBTTT and P3HT varies in organic field effect transistors upon differentiating factors such as gate voltage. 63 This study was carried out as an alternative to measuring thermoelectric properties in chemically doped organic semiconductors due to the morphological changes that can be seen in these materials when doped.…”

Section: P-type Organic Thermoelectric Materialsmentioning

confidence: 99%

Review—Organic Materials for Thermoelectric Energy Generation

Cowen

Atoyo

Carnie

et al. 2017

ECS J. Solid State Sci. Technol.

130

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Organic semiconductor materials have been promising alternatives to their inorganic counterparts in several electronic applications such as solar cells, light emitting diodes, field effect transistors as well as thermoelectric generators. Their low cost, light weight and flexibility make them appealing in future applications such as foldable electronics and wearable circuits using printing techniques. In this report, we present a mini-review on the organic materials that have been used for thermoelectric energy generation. The reduction in the effects of climate change, caused by the burning of fossil fuels, has recently been given increased emphasis by major world governments and it is therefore necessary to consider the efficiency of the methods we currently use to generate energy. It has previously been estimated that 63% of global energy consumption is wasted with the major form of this waste being heat.1,2 It is therefore important to develop methods of reconverting this wasted heat back in to useful forms of energy, such as electricity.Thermoelectric generators (TEG) are a promising technology which make use of a process known as the Seebeck effect for heat recovery. The Seebeck effect can be described as two dissimilar conductors or semiconductors connected thermally in parallel and electrically in series and exposed to a temperature gradient causing a difference in voltage between the two materials.3,4 In a TEG one p-type and one ntype semiconductor make use of the Seebeck effect by connecting one to the other electrically in series and thermally in parallel; a general device setup is shown in Figure 1. By connecting the two components, by a junction which is heated, the n-type component of the device transports electrons from the hot junction to a heat sink while the p-type material transports positively charged holes along the same direction of the temperature gradient. The reverse is also possible if the holes and electrons flow away from a cold connecting junction to a heated point at the end of each semiconductor, this induces a constant cooling at the junction through the Peltier effect. 4,5The quantification of the Seebeck effect, in a specific material, is given by the Seebeck coefficient, α, and is the open circuit voltage of a material subjected to a temperature gradient, commonly with units on the scale of μVK −1 to mVK −1 . 6 A materials overall efficiency in the conversion of heat to electricity is given by the dimensionless figure of merit, ZT, defined as,where σ is the electrical conductivity and κ is the thermal conductivity. [6][7][8] It is therefore necessary for thermoelectric materials to have a high electrical conductivity and a low thermal conductivity making electrically conducting metals inappropriate for thermoelectric applications due to their high thermal conductivities and low z E-mail: m.j.carnie@swansea.ac.uk; derya.baran@kaust.edu.sa; b.c.schroeder@qmul .ac.uk Seebeck coefficients. The ideal thermoelectric materials should be an electrical crystal to maximize σ and at the s...

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“…In this regard, there has been considerable progress in recent years. Zhang et al experimentally proved that a field effect transistor can be used as a field regulation platform for the thermoelectric properties of organic semiconductors, which providing a new strategy for the efficient selection of organic semiconductor thermoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Organic Thermoelectric Materials: Measurement, Theoretical Models, and Optimization Strategies

Zeng

Cao

et al. 2019

Adv Funct Materials

125

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The demands for waste heat energy recovery from industrial production, solar energy, and electronic devices have resulted in increasing attention being focused on thermoelectric materials. Over the past two decades, significant progress is achieved in inorganic thermoelectric materials. In addition, with the proliferation of wireless mobile devices, economical, efficient, lightweight, and bio‐friendly organic thermoelectric (OTE) materials have gradually become promising candidates for thermoelectric devices used in room‐temperature environments. With the development of experimental measurement techniques, the manufacturing for nanoscale thermoelectric devices has become possible. A large number of studies have demonstrated the excellent performance of nanoscale thermoelectric devices, and further improvement of their thermoelectric conversion efficiency is expected to have a significant impact on global energy consumption. Here, the development of experimental measurement methods, theoretical models, and performance modulation for nanoscale OTE materials are summarized. Suggestions and prospects for the future development of these devices are also provided.

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Modulated Thermoelectric Properties of Organic Semiconductors Using Field‐Effect Transistors

Cited by 103 publications

References 55 publications

Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

Bismuth Interfacial Doping of Organic Small Molecules for High Performance n‐type Thermoelectric Materials

Review—Organic Materials for Thermoelectric Energy Generation

Nanoscale Organic Thermoelectric Materials: Measurement, Theoretical Models, and Optimization Strategies

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