Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

Abstract

The construction of a high power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diode with reduced values of parasitic capacitance has been proposed and investigated. This design uses a 3.5 μm thick polyimide layer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the entire structure was grown by liquid phase epitaxy. Lasers with λ=1.3 μm and resonator lengths of 310, 450, and 560 μm exhibited modulation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 72, and 91 mW, respectively. Lasers with λ=0.8 μm and a 600 μm resonator showed a 5.6 GHz modulation bandwidth at an output power of 98 mW.

High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions

“…Comparing with those structures reported previously, [2][3][4][5][6][7] it not only has a more convenient and economic procedure, but also exhibits better performances. In addition, unlike the proton-bombarded stripegeometry laser, the defect of proton bombardment can not affect the lifetime of the selective proton-bombarded buried crescent (SPB-BC) laser because there is a 3.0 µm width unbombarded region as an optical field attenuation region to obstructing the growth and propagation of defects at each side of active region.…”

“…1) However, their small-signal modulation bandwidth is rather limited due to excess parasitic capacitance from the current blocking reverse-biased p-n junction. In order to improve the modulation bandwidth, various structures, therefore, have been developed, such as polyimide-based semi-insulating planar buried heterostructures, 2,3) InGaAsP buried crescent injection lasers with semi-insulating current blocking layers, [4][5][6] V-grooved inner-stripe lasers with semi-insulating current confinement structure on p-InP substrate, 7) and so on.…”