We present the results of a study of H202:HF:C406H6(tartaric acid):H20 solution for chemical polishing of GaSb wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in H202 (2.0-3.0 mol) and HF (0.0-5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). It was found that the etchant has excellent polishing properties for GaSb wafers when the HF concentration was less than 1.5 mol. For HF concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied.

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The construction of a high power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diode with reduced values of parasitic capacitance has been proposed and investigated. This design uses a 3.5 μm thick polyimide layer in the current confinement regions of the buried laser. The active area of the laser is surrounded by semiconductor material and the entire structure was grown by liquid phase epitaxy. Lasers with λ=1.3 μm and resonator lengths of 310, 450, and 560 μm exhibited modulation bandwidths of 8.7, 9.2, and 6.6 GHz at operating powers of 41, 72, and 91 mW, respectively. Lasers with λ=0.8 μm and a 600 μm resonator showed a 5.6 GHz modulation bandwidth at an output power of 98 mW.

Temperature dependence of photoluminescence oxygen-related deep levels in Al 0.2 Ga 0.3 In 0.5 P : Be grown by solid source molecular beam epitaxy Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy