Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

“…Earlier studies have pointed out that in some cases oxygen that is present in the MBE growth may be the cause of inferior quality of AlGaInP when grown at high T cr [2][3][4]12]. The present results are difficult to explain using the previous observations, e.g., the ones seen in Ref.…”

“…The oxygen incorporation into AlGaInP has been shown to be related to the phosphorus cracker source and notably to the cracking zone temperature (T cr ). Therefore, one way to reduce oxygen contamination in MBE-grown AlGaInP has been to use low cracking tube temperature [2][3][4]12]. The recent findings, presented here, however, indicate that oxygen appears not to be the only detrimental contaminant whose incorporation into AlGaInP could be related to T cr .…”

“…In previous studies, oxygen has also been shown to deteriorate the properties of AlGaInP-based heterostructures by reducing the carrier lifetime and optical activity [1][2][3][4][5][6][7][8]. The oxygen incorporation into AlGaInP has been shown to be related to the phosphorus cracker source and notably to the cracking zone temperature (T cr ).…”