Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Tukiainen, Antti; Likonen, J.; Toikkanen, L.; Leinonen, Tomi

doi:10.1016/j.jcrysgro.2015.02.048

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…On one hand, Boron can act as electron compensator in InGaP with a deep mid-gap level at Ec-0.9 eV [31]. On the other hand, Chlorine acts as an electron compensator in the InP system [32] but there is a lack of studies about the impact of Chlorine and Boron in the InGaP/AlGaInP system [33]. Further investigations are required to unravel their effect on LED efficiency.…”

Section: Figure 7 Integrated CL Intensity Mappings At Different Temperatures For 36×36 µM² and 56×56 µM² Pixelsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.

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Section: Figure 7 Integrated CL Intensity Mappings At Different Temperatures For 36×36 µM² and 56×56 µM² Pixelsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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“…Typically, the more there is Al in AlGaInP, the more severe the challenges are. Nonoptimal material characteristics have been caused, for instance, by oxygen and boron impurities, [14][15][16] partly originating from the reactive nature of Al and strong bonds of Al compounds. In addition, issues with doping activation and low charge carrier mobilities can increase the resistive losses and cause low charge collection efficiencies.…”

Section: Resultsmentioning

confidence: 99%

Wide spectral coverage (0.7–2.2 eV) lattice‐matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials

Aho

Isoaho

Raappana

et al. 2021

Progress in Photovoltaics

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We report on the progress in developing lattice-matched GaAs-based solar cells with focus on developing AlGaInP, AlGaAs, and GaInNAsSb materials, aiming at achieving a wide spectral coverage, that is, 0.7-2.2 eV. To this end, we first benchmark the performance of an upright four-junction GaInP/GaAs/GaInNAsSb/GaInNAsSb solar cells grown by molecular beam epitaxy on p-GaAs substrates with bandgaps of 1.88, 1.42, 1.17, and 0.93 eV, respectively. The four-junction cell exhibited an efficiency of 39% at 560-sun illumination while showing good electrical performance even up to 1000 suns. As a first step to further improve the efficiency toward 50% level, we demonstrate AlGaInP (>2 eV) and GaInNAsSb (<0.8 eV) subcells. We prove that AlGaInP cells with 0.1 Al composition would exhibit current-matching condition when being incorporated in a five-junction architecture together with two GaInNAsSb bottom and AlGaAs top junctions. Furthermore, current matching required for a six-junction tandem architecture is achieved for an Al composition of 0.26. Overall, the results open a practical path toward fabrication of lattice-matched solar cells with more than four junctions.

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“…Finally, the preparation of a multi-isotope Pu AMS standard and the preliminary results of a rst inter-laboratory comparison have been reported. 161 The material was made from dissolution of individual isotopes of 239 Pu (IRMM-081a), 240 Pu (IRMM-083), 242 Pu (IRMM-043) and 244 Pu (IRMM-042a) and then together forming a stock solution of composition approximately 1 : 1 : 1 : 0.1. The stock was used to prepare samples that were then sent to several laboratories for analysis using AMS.…”

Section: Functional Materialsmentioning

confidence: 99%

“…The ID-AMS determination of actinides in uoride matrices has been investigated. 179,180 The 239 Pu, 240 Pu and 241 Am were separated from the sample matrix using an extraction chromatography column with N,N,N 0 ,N 0tetra-n-octyldiglycolamide active groups. Analytes were extracted from the environmental samples using acid digestion and then separated from concomitant ions using the column.…”

Section: Functional Materialsmentioning

confidence: 99%

“…185 The effect of the heating rate of the evaporation lament on the analysis of Pu ranging from 0.1-1000 fg was tested, with results indicating that effects were minimal over the range 100-250 mA min À1 . Assorted isotope ratios ( 238 Pu/ 239 Pu, 240 Pu/ 239 Pu, 241 Pu/ 239 Pu and 242 Pu/ 239 Pu) were measured in as little as 70 fg of SRM 947. The 240 Pu/ 239 Pu could be determined in 0.1 fg, which corresponds to a plutonium oxide particle size of 0.2 mm.…”

Section: Functional Materialsmentioning

confidence: 99%

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Atomic spectrometry update: review of advances in the analysis of metals, chemicals and functional materials

Carter

Fisher

García³

et al. 2016

J. Anal. At. Spectrom.

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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Cited by 9 publications

References 13 publications

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Wide spectral coverage (0.7–2.2 eV) lattice‐matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials

Atomic spectrometry update: review of advances in the analysis of metals, chemicals and functional materials

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