Modulation of Electronic Properties in Laterally and Commensurately Repeating Graphene and Boron Nitride Composite Nanostructures

Özçelik, V. Ongun; Durgun, Engin; Çiraci, S.

doi:10.1021/acs.jpcc.5b01598

Cited by 22 publications

(13 citation statements)

References 72 publications

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“…[134][135][136] Composite structures made of lateral and vertical junctions of 2D SL structures like Graphene/BN or MoS 2 / WS 2 that have been previously treated both theoretically and experimentally, heralded great potential for new generation artificial structures with promising applications. 20,[137][138][139][140][141] Motivated with the synthesis of very thin h-GaN and h-AlN, Onen et al 35 recently studied the composite structures of their single-layers. They showed that stable, in-plane composite materials, (GaN) p /(AlN) q can be constructed of periodically repeating stripes of GaN and AlN continuously (or commensurately) joined along their zigzag (Z) edges.…”

Section: Composite Structures Of Gan/alnmentioning

confidence: 99%

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Kecik

Önen

Konuk

et al. 2018

Applied Physics Reviews

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Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dimensional (2D) stable, single-layer (SL) structures being wide band gap semiconductors and showing electronic and optical properties different from those of their bulk parents. Research on these 2D structures have gained importance with recent experimental studies achieving the growth of ultrathin 2D GaN and AlN on substrates. It is expected that these two materials will open an active field of research like graphene, silicene, and transition metal dichalcogenides. This topical review aims at the evaluation of previous experimental and theoretical works until 2018 in order to provide input for further research attempts in this field. To this end, starting from three-dimensional (3D) GaN and AlN crystals, we review 2D SL and multilayer (ML) structures, which were predicted to be stable in free-standing states. These are planar hexagonal (or honeycomb), tetragonal, and square-octagon structures. First, we discuss earlier results on dynamical and thermal stability of these SL structures, as well as the predicted mechanical properties. Next, their electronic and optical properties with and without the effect of strain are reviewed and compared with those of the 3D parent crystals. The formation of multilayers, hence prediction of new periodic layered structures and also tuning their physical properties with the number of layers are other critical subjects that have been actively studied and discussed here. In particular, an extensive analysis pertaining to the nature of perpendicular interlayer bonds causing planar GaN and AlN to buckle is presented. In view of the fact that SL GaN and AlN can be fabricated only on a substrate, the question of how the properties of free-standing, SL structures are affected if they are grown on a substrate is addressed. We also examine recent works treating the composite structures of GaN and AlN joined commensurately along their zigzag and armchair edges and forming heterostructures, d-doping, single, and multiple quantum wells, as well as core/ shell structures. Finally, outlooks and possible new research directions are briefly discussed. Published by AIP Publishing. https://doi.

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Section: Composite Structures Of Gan/alnmentioning

confidence: 99%

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Kecik

Önen

Konuk

et al. 2018

Applied Physics Reviews

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“…Since both 2D constituents have been synthesized already [17], earlier growth studies [14,18,19] and present theoretical analysis of energetics and stability let us expect that these SL composite structures with sharp boundaries can readily be produced [20][21][22][23][24] and remain stable in diverse applications.…”

Section: Introductionmentioning

confidence: 99%

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

2017

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Planar composite structures formed from the stripes of transition metal dichalcogenides joined commensurately along their zigzag or armchair edges can attain different states in a two-dimensional (2D), single-layer, such as a half metal, 2D or one-dimensional (1D) nonmagnetic metal and semiconductor. Widening of stripes induces metal-insulator transition through the confinements of electronic states to adjacent stripes, that results in the metalsemiconductor junction with a well-defined band lineup. Linear bending of the band edges of the semiconductor to form a Schottky barrier at the boundary between the metal and semiconductor is revealed. Unexpectedly, strictly 1D metallic states develop in a 2D system along the boundaries between stripes, which pins the Fermi level. Through the δ doping of a narrow metallic stripe one attains a nanowire in the 2D semiconducting sheet or narrow band semiconductor. A diverse combination of constituent stripes in either periodically repeating or finite-size heterostructures can acquire critical fundamental features and offer device capacities, such as Schottky junctions, nanocapacitors, resonant tunneling double barriers, and spin valves. These predictions are obtained from first-principles calculations performed in the framework of density functional theory.

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“…Recently in‐plane heterostructures of graphene and hexagonal boron nitride (h‐BN) have been investigated as an alternative monolayer semiconductor . It has been demonstrated in both theory and experiments that a bandgap can be introduced to graphene by doping with small domains of h‐BN. Furthermore, the bandgap can be tuned according to the relative concentrations of carbon and h‐BN without significantly hindering the carrier mobility .…”

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confidence: 99%

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

Bradford

Shafiei

MacLeod

et al. 2019

Adv Materials Inter

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Modulation of Electronic Properties in Laterally and Commensurately Repeating Graphene and Boron Nitride Composite Nanostructures

Cited by 22 publications

References 72 publications

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene

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