Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment

Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers

“…Figure b demonstrates the good linear relationship of ln­( J / T 2 ) versus E 1/2 for three samples in lower electric fields (0.25–0.64 MV/cm). Based on the slope of SE plots, which can be expressed as follows: , where the fitted ε r is quite close to the expected value of 2.76, which is the square of the measured refractive index n = ε r 1/2 = 1.66 . Because Al 2 O 3 is also a dielectric layer which will contribute to the experimental results, the estimated ε r should correspond to both Yb 2 O 3 and Al 2 O 3 .…”

“…To further investigate the quality of YbO x and AlO x layers, Figure shows the variation of Yb 4d and Al 2p CL XPS spectra for three different laminated gate stacks. Yb 4d spectra, as depicted in Figure a, exhibit two subpeaks ascribed to Yb 4d 3/2 and Yb 4d 5/2 with a spin–orbit splitting of 3.9 eV, which indicates the formation of the YbO x component. Compared with samples S2 and S3, both peaks for sample S1, corresponding to Yb 4d 3/2 and Yb 4d 5/2 , shifted to lower binding energies of 189.1 and 185.2 eV, which are related to the Yb 2 O 3 reference position. , A similar result has been reported in ZrO x and ScO x films. , The phenomenon for this shift is mainly attributed to the progressive oxidation of Yb 2 O 3 or the decrease in the coordination number of Yb 3+ ions in the film .…”

“…Based on the Tauc relation, the intercepts by extrapolating the linear portion were determined to be 5.78, 5.56, and 5.60 eV for samples S1, S2 and S3, respectively. Compared with Yb 2 O 3 and Al 2 O 3 films, these values show a systematic transition of band gap for the three laminated structures. , Additionally, the valence-band maximum (VBM) for different laminated gate dielectrics was measured because the band alignment is an essential physical property for characterizing a semiconductor interface. Figure a indicates the valence bands of GaSb surface and Yb 2 O 3 gate dielectrics.…”

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

“…Apart from this, at an applied voltage of 1 V, electrical performance has shown that Yb 2 O 3 /Si gate stacks tempered at 300 °C describe better dielectric execution with leakage current flow density of 3.66 × 10 −8 A/ cm 2 . For various temperatures, the leakage current conduction mechanism of MOS capacitors can be found in Hao et al 8 The lead-free novel RE 3+ -MnO 3 (i.e., RE = Y, Ho, Er, and Yb) powders, as semiconductors, synthesized at 1200 °C were reported. From them, YbMnO 3 was shown as an n-type semiconductor with a narrow band gap of 1.35 eV, as illustrated in Figure 11.…”

“…REOs, in the form of sesquioxides (R 2 O 3 , R = rare earth elements), have recently received substantial attention in modern technologies because of their diversified physical and chemical properties. Their use has shown success in myriad sectors including highly efficient sensors, , detectors, − and electronic devices. − Many commercial prospects are in close connection with R 2 O 3 -doped nanocompounds as a potential alternative to the conventional manufacturing of these high-tech appliances . However, it is difficult to select a particular REO because of its varying chemical composition and complex morphology. − The manufacturing costs and efficient splitting of REOs are of critical concern for researchers and industrialists as well.…”