MOKE study of magnetic compensation in polycrystalline gadolinium iron garnet thin film

Kuila, Manik; Hussain, Zaineb; Reddy, ‬V. Raghavendra

doi:10.1016/j.jmmm.2018.10.083

Cited by 16 publications

(6 citation statements)

References 29 publications

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“…The compensation temperature proves to be a sensitive measure of defect populations, and the presence of several types of point defects likely explains the discrepancies between compensation temperatures found in many reports of REIG thin films versus bulk values. [18,19,22,39,40] The stabilization of large defect populations in epitaxial films has important implications for the design of REIGs for spintronic applications and more generally for the engineering of complex oxide films for electronics and other applications. Defect engineering through co-deposition or control of growth parameters, therefore, emerges as a powerful method to control the magnetic properties of REIGs.…”

Section: Discussionmentioning

confidence: 99%

“…[ 18,38 ] PLD‐grown single‐crystal DyIG/GGG had T comp = 190 K [ 22 ] whereas bulk DyIG has T comp = 220 K. [ 38 ] PLD‐grown polycrystalline GdIG showed T comp = 377 K, ≈100 K higher than that of bulk GdIG. [ 40 ] Sputtered Tb‐deficient TbIG films showed T comp 25–60 K below that of bulk TbIG. [ 41 ] In other studies, the T comp of thin films matched that of bulk such as polycrystalline DyIG [ 22 ] and single crystal and polycrystalline TbIG.…”

Section: Introductionmentioning

confidence: 99%

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Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Rosenberg

Bauer

Cho

et al. 2023

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Complex oxide films stabilized by epitaxial growth can exhibit large populations of point defects which have important effects on their properties. The site occupancy of pulsed laser-deposited epitaxial terbium iron garnet (TbIG) films with excess terbium (Tb) is analyzed, in which the terbium:iron (Tb:Fe) ratio is 0.86 compared to the stoichiometric value of 0.6. The magnetic properties of the TbIG are sensitive to site occupancy, exhibiting a higher compensation temperature (by 90 K) and a lower Curie temperature (by 40 K) than the bulk Tb 3 Fe 5 O 12 garnet. Data derived from X-ray core-level spectroscopy, magnetometry, and molecular field coefficient modeling are consistent with occupancy of the dodecahedral sites by Tb 3+ , the octahedral sites by Fe 3+ , Tb 3+ and vacancies, and the tetrahedral sites by Fe 3+ and vacancies. Energy dispersive X-ray spectroscopy in a scanning transmission electron microscope provides direct evidence of Tb Fe antisites. A small fraction of Fe 2+ is present, and oxygen vacancies are inferred to be present to maintain charge neutrality. Variation of the site occupancies provides a path to considerable manipulation of the magnetic properties of epitaxial iron garnet films and other complex oxides, which readily accommodate stoichiometries not found in their bulk counterparts.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Rosenberg

Bauer

Cho

et al. 2023

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“…Recently PMA was achieved in polycrystalline films of europium iron garnet (EuIG) on (0001) quartz, Dy 3− x Bi x Fe 5− y Ga y O 12 on glass, and for Dy 3− x Ce x Fe 5− y Al y O 12 on Si due to a dominant magnetoelastic anisotropy. A mixed anisotropy has also been reported for Gd 3 Fe 5 O 12 on Si . To obtain PMA, a combination of positive (negative) magnetostriction and an in‐plane compressive (tensile) strain state is required.…”

Section: Introductionmentioning

confidence: 93%

“…A mixed anisotropy has also been reported for Gd 3 Fe 5 O 12 on Si. [42] To obtain PMA, a combination of positive (negative) magnetostriction and an in-plane compressive (tensile) strain state is required. Since iron garnets have a relatively high thermal expansion coefficient (e.g., 10.4 10 −6 K −1 for YIG [43] ), the garnet will be under in-plane tensile strain on many common substrates after annealing, with the exception of high thermal expansion materials such as (0001)-oriented quartz.…”

Section: Introductionmentioning

confidence: 99%

Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon

Bauer

Rosenberg

Kundu

et al. 2019

Adv Elect Materials

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magnetization, [12,13] magnetocrystalline anisotropy, [14] magnetostriction, [15] Gilbert damping parameter, [16-19] and magnetooptical spectral response, [10,20,21] and the net anisotropy may be varied widely by choice of substrate, which affects the strain state of the film. [22,23] Ferrimagnetic insulators, such as YIG and REIG, are particularly promising for spintronics as they do not contribute Ohmic losses from parasitic current shunting and exhibit fast magnetization dynamics and low losses in the THz regime. [24] Films with perpendicular magnetic anisotropy (PMA) are advantageous for investigation of spin-orbit torque (SOT) effects, chiral magnetic textures such as skyrmions, and for high density information storage based on domain walls. [25,26] It is difficult to grow YIG with PMA, but REIG films with PMA have been grown, and manipulation of their magnetization has been demonstrated via a spin-orbit torque (SOT) from an adjacent heavy metal [3,27] or from a topological insulator [28,29] with a large spin Hall angle. Electrical control of the magnetization using the damping-like SOT offers the potential for memory and logic devices with ultra-low power dissipation. [30-32] Taking advantage of these properties in spintronic devices requires the integration of PMA REIG films onto non-garnet substrates; silicon is of particular interest as a substrate due to its commercial ubiquity. Single crystal garnet thin films have been grown with PMA by selecting a substrate and garnet composition such that the out-of-plane magnetoelastic anisotropy K me originating from epitaxial lattice mismatch overcomes the shape anisotropy K sh. PMA has been demonstrated in samarium-, [33] thulium-, [18] europium-, [19,34] and terbium [19,34] iron garnets on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , GGG) substrates, and bismuthsubstituted yttrium-[7] and thulium-[35,36] iron garnets on substituted GGG (Gd 2.6 Ca 0.4 Ga 4.1 Mg 0.25 Zr 0.65 O 12 , SGGG). For films grown on (111)-oriented garnet substrates the magnetocrystalline anisotropy also contributes to PMA by an amount K 1 /12, which is typically small, where K 1 is the first order magnetocrystalline anisotropy coefficient. For polycrystalline films grown on non-garnet substrates, the elastic anisotropy originates instead from thermal expansion mismatch with the substrate on cooling from the annealing Magnetic insulators, such as the rare-earth iron garnets, are promising materials for energy-efficient spintronic memory and logic devices, and their anisotropy, magnetization, and other properties can be tuned over a wide range through selection of the rare-earth ion. Films are typically grown as epitaxial single crystals on garnet substrates, but integration of these materials with conventional electronic devices requires growth on Si. The growth, magnetic, and spin transport properties of polycrystalline films of dysprosium iron garnet (DyIG) with perpendicular magnetic anisotropy (PMA) on Si substrates and as single crystal films on garnet substrates are reported. PMA orig...

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“…Through replacing a nonmagnetic Re element (Y, for example) by the other Re elements with large magnetic moments (Gd, [41,42] Eu, [43] Ho, [44,45] Tb, [46,47] and Dy [48,49] in particular), additional source of magnetism, together with many intriguing properties are introduced. [50][51][52][53][54][55] Using Gd 3 Fe 5 O 12 (GdIG) as an example, it contains three magnetic sublattices, [56,57] the a-site Fe 3+ ions octahedrally coordinated with the surrounding O 2− ions, the d-site Fe 3+ ions tetrahedrally coordinated with the O 2− ions, and the c-site Gd 3+ ions dodecahedrally coordinated with the O 2− ions.…”

Section: Introductionmentioning

confidence: 99%

Optimized growth of compensated ferrimagnetic insulator Gd₃Fe₅O₁₂ with a perpendicular magnetic anisotropy*

Zhou¹,

Cai²,

Xu³

et al. 2021

Chinese Phys. B

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Compensated ferrimagnetic insulators are particularly interesting for enabling functional spintronic, optical, and microwave devices. Among many different garnets, Gd3Fe5O12 (GdIG) is a representative compensated ferrimagnetic insulator. In this paper, we will study the evolution of the surface morphology, the magnetic properties, and the magnetization compensation through changing the following parameters: the annealing temperature, the growth temperature, the annealing duration, and the choice of different single crystalline garnet substrates. Our objective is to find the optimized growth condition of the GdIG films, for the purpose of achieving a strong perpendicular magnetic anisotropy (PMA) and a flat surface, together with a small effective damping parameter. Through our experiments, we have found that the surface roughness approaching 0.15 nm can be obtained by choosing the growth temperature around 700 °C, together with an enhanced PMA. We have also found the modulation of magnetic anisotropy by choosing different single crystalline garnet substrates which change the tensile strain to the compressive strain. A measure of the effective magnetic damping parameter (α eff = 0.04±0.01) through a spin pumping experiment in a GdIG/Pt bilayer is also made. Through optimizing the growth dynamics of GdIG films, our results could be useful for synthesizing garnet films with a PMA, which could be beneficial for the future development of ferrimagnetic spintronics.

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MOKE study of magnetic compensation in polycrystalline gadolinium iron garnet thin film

Cited by 16 publications

References 29 publications

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon

Optimized growth of compensated ferrimagnetic insulator Gd₃Fe₅O₁₂ with a perpendicular magnetic anisotropy*

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MOKE study of magnetic compensation in polycrystalline gadolinium iron garnet thin film

Cited by 16 publications

References 29 publications

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Revealing Site Occupancy in a Complex Oxide: Terbium Iron Garnet

Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon

Optimized growth of compensated ferrimagnetic insulator Gd3Fe5O12 with a perpendicular magnetic anisotropy*

Contact Info

Product

Resources

About

Optimized growth of compensated ferrimagnetic insulator Gd₃Fe₅O₁₂ with a perpendicular magnetic anisotropy*