Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)

Vandana, B.; Parashar, Prashant; Patro, B. Shivalal; Pradhan, K P; Mohapatra, Sushanta Kumar; Das, Jitendra Kumar

doi:10.1007/978-981-13-2553-3_56

Cited by 3 publications

(4 citation statements)

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“…In addition Figures 5 and 6 show that drain current is higher for GaSb-SiGe than for SiGe and Si structures. 18 Current increases as the concentration of doping increases. A JL DGMOSFET is a gated resistor where the gate modulates the mobile carrier density without PN, N + N or P + P junctions.…”

Section: Results Analysismentioning

confidence: 98%

“…During the off state, the current flow is sealed for the depletion condition due to the metal and semiconductor work function difference of the proposed structure. 18 Current increases as the concentration of doping increases. But it will be difficult to make the device off for high concentration of doping, henceforth the device's cross-sectional area will be reduced to a minimum value.…”

Section: Results Analysismentioning

confidence: 98%

“…6 Some new architectures are being developed under the MUGFET, such as double gate (DG) MOSFET, 7,8 gate all around (GAA) MOSFET, 9 quadruple gate (QG) MOSFET. 17,18 In terms of SCEs, 19 the device plays supremacy over junction-based FETs. In the case of MUGFETs, there are several steep junctions such as p-n, n + −n, n + −p, p + −p, p + −n, p + −n+, etc.…”

mentioning

confidence: 99%

“…16 Channel region becomes fully depleted due to high doping dependency strong vertical electric field below V TH and the electric field becomes zero above the threshold condition. 17,18 In terms of SCEs, 19 the device plays supremacy over junction-based FETs. Because distance among the non-depleted source and drain regions become larger than the physical gate length of a JL DGMOSFET at a gate voltage less than V TH due to the electrostatic squeezing effect.…”

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Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

Rout

Dutta

2019

Engineering Reports

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In recent years, technology has embraced the use of Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistors (JL DGMOSFET) to reduce Short Channel Effects (SCEs). This research presents a novel JL DGMOS-FET based on a highly doped N-type SiGe in which an III-V compound material is used at source regime. The III-V compound material GaSb with higher mobility and higher injection velocity is used as source material, whereas SiGe is considered for both channel and drain materials to produce a higher output current and low leakage current for the N channel JL DGMOSFET. In addition, high-k dielectric material HfO 2 is employed to improve the controllability of the gate at 20 nm channel length. Different parameters, such as I d , SS, g m , TGF, I on /I off ratio, C gs , and f T of a Symmetric JL DGMOSFET are studied and compared to existing works. The comparison shows that the proposed JL DGMOSFET outperforms the existing state of knowledge. The analysis is also being extended by including the trap charge for the symmetric JL DGMOSFET. Parametrically, the asymmetrical structure is finally studied. The proposed structure yields a higher I d of 40 mA, SS of 60.25 mV/decade, g m of 0.148 A/V, TGF of 3.69 V-1, I on /I off ratio of 3.41 × 10 13 , C gs of 3.78 × 10 −16 F and f T of 1.19 × 10 13 Hz, hence indicating an improved RF and DC analysis. K E Y W O R D Sasymmetric, cut-off frequency (f T ), donor traps, acceptor traps, gate drain capacitance (C gd ), gate source capacitance (C gs ), high-k dielectric, I on /I off ratio, junctionless double gate (JL DG) MOSFET, subthreshold swing, symmetric, transconductance (g m ), transconductance generation factor (TGF)

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Section: Results Analysismentioning

confidence: 98%

Section: Results Analysismentioning

confidence: 98%

mentioning

confidence: 99%

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confidence: 99%

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