Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer

Hu, Fangren; Ochi, Kengo; Zhao, Yue; Choi, Bongseok; Hane, Kazuhiro

doi:10.1016/j.jcrysgro.2006.07.009

Cited by 15 publications

(10 citation statements)

References 24 publications

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“…7 Device quality epitaxial GaN films have usually been grown using metal organic chemical vapor deposition ͑MOCVD͒ or molecular beam epitaxy ͑MBE͒ techniques. 1,8 However, owing to their enormous application potential, there has recently been increasing interest in polycrystalline GaN films grown by MBE, [9][10][11][12][13][14] MOCVD, [15][16][17][18] and sputtering. [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Polycrystalline, 19 nanocrystalline, 20 and amorphous 37 GaN have also shown good luminescence characteristics.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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Properties of InxGa1−xN films in terahertz range Appl. Phys. Lett. 100, 071913 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems Appl. Phys. Lett. 100, 051110 (2012) High-Q optomechanical GaAs nanomembranes Appl. Phys. Lett. 99, 243102 (2011) Mg-induced terahertz transparency of indium nitride films Appl. Phys. Lett. 99, 232117 (2011) Additional information on J. Appl. Phys. GaN films have been deposited by reactive rf sputtering of GaAs target in 100% nitrogen ambient on quartz substrates at different substrate temperatures ranging from room temperature to 700°C. A series of films, from arsenic-rich amorphous to nearly arsenic-free polycrystalline hexagonal GaN, has been obtained. The films have been characterized by phase modulated spectroscopic ellipsometry to obtain the optical parameters, viz., fundamental band gap, refractive index, and extinction coefficient, and to understand their dependence on composition and microstructure. A generalized optical dispersion model has been used to carry out the ellipsometric analysis for amorphous and polycrystalline GaN films and the variation of the optical parameters of the films has been studied as a function of substrate temperature. The refractive index values of polycrystalline films with preferred orientation of crystallites are slightly higher ͑2.2͒ compared to those for amorphous and randomly oriented films. The dominantly amorphous GaN film shows a band gap of 3.47 eV, which decreases to 3.37 eV for the strongly c-axis oriented polycrystalline film due to the reduction in amorphous phase content with increase in substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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“…[21][22][23] Alternatively, one may resort to a metallic surfactant layer or some novel buffer techniques. [24][25][26][27] Although these techniques are said to lead to improved epitaxial films, their superiority in photovoltaic applications remains to be demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

Xu¹,

Zhang

et al. 2011

Journal of Applied Physics

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Growths of GaN on Si(111) -(7 Â 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p-and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n À -Si substrate shows rectifying characteristics.

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“…A RF nitrogen plasma source and solid Ga and In source were used as the source materials. After several experiments, it was found that nanocolumn QW crystals on Si have better quality and the photoluminescence (PL) is more efficient, compared with the flat QW crystal on Si [4][5][6][7]. In order to decrease the defects, a low-temperature buffer layer (GaN, nitrified Ga dots or InN interlayer) was first deposited on the Si substrate, and then it was followed by the deposition of the high-temperature GaN.…”

Section: Introductionmentioning

confidence: 99%

GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate

Ito

Zhao

et al. 2008

Phys. Status Solidi (c)

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Nanocolumn‐crystallized InGaN/GaN quantum well crystals were deposited on Si (111) substrate. Photoluminescence measurement demonstrated a wide emission wavelength from about 400 nm to 700 nm. We propose a new light source device combined with Micro‐Electro‐Mechanical Systems (MEMS). The proposed device is monolithically composed of the GaN light source structures and Si MEMS. The direction of the light beam emitted from an array of the light source can be changed by a MEMS beam steering mechanism. A micro‐stage with comb actuators was fabricated from the Si substrate. The InGaN/GaN quantum well film is patterned on the micro‐stage. Basic researches on the growth of GaN crystals on Si substrate were also carried out. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Molecular beam epitaxial growth of GaN thin film on Si substrate with InN as interlayer

Cited by 15 publications

References 24 publications

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

GaN‐Si‐MEMS structure fabricated from nano‐column GaN quantum well crystal grown on Si substrate

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