2005
DOI: 10.1016/j.jcrysgro.2005.01.022
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Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer

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Cited by 24 publications
(16 citation statements)
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“…According to the binary equilibrium phase diagram, the solubility of MgO in ZnO is limited to below 4 mol% [8]. However, because Mg 2+ and Zn 2+ have a similar atomic radii of 0.57 Å and 0.60 Å, respectively [9][10][11], Mg x Zn 1 − x O thin films with a Mg content of~50 at.% having a wurtzite structure was reported by using double buffer layers [12]. It has also been reported that the characteristics of Mg x Zn 1 − x O thin films can be affected by substrates, buffer layers, growth conditions and growth methods [13][14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…According to the binary equilibrium phase diagram, the solubility of MgO in ZnO is limited to below 4 mol% [8]. However, because Mg 2+ and Zn 2+ have a similar atomic radii of 0.57 Å and 0.60 Å, respectively [9][10][11], Mg x Zn 1 − x O thin films with a Mg content of~50 at.% having a wurtzite structure was reported by using double buffer layers [12]. It has also been reported that the characteristics of Mg x Zn 1 − x O thin films can be affected by substrates, buffer layers, growth conditions and growth methods [13][14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc magnesium oxide (Zn 1Àx Mg x O) in thin film form has attracted the attention of researchers due to its multifarious uses in device technology [1][2][3][4]. The wurtzite type-Zn 1Àx Mg x O alloys possess attractive properties for possible applications in optoelectronic and display devices.…”
Section: Introductionmentioning
confidence: 99%
“…In the past decade, Zn 1Àx Mg x O in thin film form has been studied with ample care [2,7,[11][12][13][14][15][16]. There are several works reporting the formation of Zn 1Àx Mg x O nanostructures such as nanopillars by metal organic vapour-phase epitaxy (MOVPE) [17], nanowires by pulsed laser deposition (PLD) [18,19], nanorods by metal organic chemical vapour deposition (MOCVD) [16] and dimension-decrescent nanorods by catalyst-free thermal evaporation [20].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, MgO forms very flat interface with ferromagnetic metals [8]. It is also used as the buffer layer for the growth of hexagonal ZnO layers on Si [9] as well as sapphire [10] substrates to obtain flat interfaces. However, few reports are available on the growth of GaN on MgO substrate.…”
Section: Introductionmentioning
confidence: 99%