Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

Roslund, Jöran H.; Zsebök, O.; Swenson, G.; Andersson, Thomas

doi:10.1016/s0022-0248(96)00978-5

Cited by 4 publications

(3 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Native defects in semiconductor thin films strongly affect their electrical properties. It is important to analyze the residual acceptor concentration N A in the InGaSb/PI thin film, as the conduction type of InGaSb depends on the film composition . Therefore, the electron concentrations were measured in the temperature range of 100–300 K. The temperature dependence of the electron concentration n ( T ) can be expressed using the charge‐neutralized condition under the assumption that multiple donors D i ( i = 1, 2,…) and N A are present, as follows

n true(T true) = {true \sum}_{i = 1}^{n} N_{D_{normali}} true[1 - f_{F D} true(Δ E_{D_{normali}} true) true] - N_{normalA}

where

N_{D_{normali}}

and

f_{F D} true(Δ E_{D_{normali}} true)

denote the D i concentration and the Fermi–Dirac distribution function of the donor, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In the case of undoped InSb, interstitial In (In i ) and Sb antisite (Sb In ) have the lowest defect formation energies under In rich and Sb rich conditions, respectively; these defects act as donors because of their positive charge states . The conduction type of InGaSb changes from p ‐type to n ‐type with the increase in the In content . Therefore, D 1 , which has a shallow donor level, is presumed to be In i or Sb In .…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Nishimoto

Fujihara

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Flexible InGaSb thin films are considered useful for reducing the power generation cost of thermophotovoltaic (TPV) systems. The growth and evaluation of flexible InGaSb thin films on polyimide (PI) films by multicathode RF magnetron sputtering are reported here. The obtained InGaSb/PI thin film is a polycrystalline and nearly stoichiometric (In 0.24 Ga 0.27 Sb 0.49 ) thin film. The conduction type is n-type, and the electron mobility is 108 cm 2 V À1 s À1 . The analysis of its electrical properties shows that In acts as a surfactant during the crystal growth. Two types of donors (In i or Sb In and defects related to the dangling bonds in the grain boundary) are observed in the InGaSb/PI thin film, with no residual acceptor. Furthermore, it is important to reduce the environmental release of TPV films by improving their aqueous stability and thereby expand the application range of largearea TPV systems. The effectiveness of a surface coating material, namely (3-mercaptopropyl) trimethoxysilane (MPT), is clarified by comparing it with the efficacy of other coating materials. The MPT coating covers the entire InGaSb/PI thin film and helps reduce its toxicity without affecting its properties. These findings lead to the conclusion that the flexible MPT-coated InGaSb/PI thin film has potential applications in TPV cells.

show abstract

n true(T true) = {true \sum}_{i = 1}^{n} N_{D_{normali}} true[1 - f_{F D} true(Δ E_{D_{normali}} true) true] - N_{normalA}

where

N_{D_{normali}}

and

f_{F D} true(Δ E_{D_{normali}} true)

denote the D i concentration and the Fermi–Dirac distribution function of the donor, respectively.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

Nishimoto

Fujihara

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Epitaxial growth of InGaSb layers on different binary substrates has been reported using different techniques. [1][2][3] Beside the complexity of these techniques, tuning to the 2 m regime usually involves performance deterioration mainly due to the lattice mismatch problems. Lattice mismatch in the grown layers increases dark current and noise, limiting both dynamic range and sensitivity of a detector.…”

mentioning

confidence: 99%

InGaSb photodetectors using an InGaSb substrate for 2μm applications

Refaat

Abedin

Bhagwat

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

Detectors operating at 2 m are important for several applications including optical communication and atmospheric remote sensing. In this letter, fabrication of 2 m photodetectors using an InGaSb substrate is reported. The ternary substrates were grown using vertical Bridgmann technique and Zn diffusion was used to fabricate p-n junction diodes and photodiodes. Dark current measurement reveals that the breakdown voltage is in the 0.75 to 1 V range. Spectral response measurements indicated a 2 m responsivity of 0.56 A / W corresponding to 35% quantum efficiency. Photodiode performance was compared to similar devices fabricated on binary substrates.

show abstract