Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Luong, T. K. P.; Ghrib, A.; Dau, Minh Tuan; Zrir, M.A.; Stoffel, M.; Thanh, V. Le; Daineche, Rachid; Le, Thi Giang; Heresanu, Vasile; Abbes, Omar; Petit, Matthieu; Kurdi, M. El; Boucaud, P.; Rinnert, H.; Murota, J.

doi:10.1016/j.tsf.2013.11.027

Cited by 26 publications

(20 citation statements)

References 27 publications

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“…The sample without the δ-layer presents a rather flat profile with 180 an mean value of about 1.4 × 10 15 cm −3 consistent with the manufacturer specifications of the Ge wafer and the sample with the δ doped layer exhibits the same flat profile except near the interface where the doping concentration increases to about 3 × 10 18 cm −3 . 185 This is in agreement with our previous results and the consideration on the difference between dopant concentrations evaluated by chemical or electrical measurements [27,31].…”

Section: Extraction Of Schottky Diodes Parameterssupporting

confidence: 90%

“…The layer is grown by a co-deposition of Ge evaporated from a two-zone heated Knudsen effusion cell and phosphorous atoms produced by a GaP decomposition source (DECO fom Dr. Eberl MBE-Komponenten GmbH). The growth parameters required to reach the high doping concentration were optimized in a previous work [27]. The Schottky diodes properties were measured with a semiconductor device analyser (Agilent B1500A) in a vacuum chamber at 10 −2 Pa over a temperature range of 30-300 K through a helium-based closed cycle refrigeration system.…”

Section: Experimental Details Devices Fabrication and Characterisationmentioning

confidence: 99%

“…Moreover the difference between the two samples in term of Gaussian distributions (especially below 120K) may arise from the heavily doped phosphorous δ-layer. As we mentioned earlier, this layer is grown by a co-deposition of Ge and P at low substrate temperature (523 K) according to our previous work where we demonstrated that the sticking coefficient of P 2 is the determining parameter to reach a high doping level in Germanium [27]. No thermal annealing were performed right after the growth of the δ-doped layer.…”

Section: Schottky Contacts Inhomogeneities: Temperature Dependence Ofmentioning

confidence: 99%

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Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Petit¹,

Hayakawa²,

Wakayama³

et al. 2016

J. Phys. D: Appl. Phys.

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Mn 5 Ge 3 Cxcompound is of great interest for spintronics applications. The various parameters of Au/Mn 5 Ge 3 C 0.6 /Ge(111) and Au/Mn 5 Ge 3 C 0.6 /δdoped Ge(111) Schottky diodes were measured in the temperature range of 30-300 K by using current-voltage and capacitance-voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomaly behaviours were explained by Schottky barriers inhomogeneities and interpreted by means of Gaussian distributions model of the Schottky barrier heights. Following this approach we show that the Mn 5 Ge 3 C 0.6 /Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn 5 Ge 3 C 0.6 /δdoped Ge contact is depicted with two Gaussian distributions according to the temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.

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Section: Extraction Of Schottky Diodes Parameterssupporting

confidence: 90%

Section: Experimental Details Devices Fabrication and Characterisationmentioning

confidence: 99%

Section: Schottky Contacts Inhomogeneities: Temperature Dependence Ofmentioning

confidence: 99%

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Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Petit¹,

Hayakawa²,

Wakayama³

et al. 2016

J. Phys. D: Appl. Phys.

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“…In the last few years, research on the tensile strained and n-doped Ge thin film on Si substrate has been the subject of many investigations with the hope to realize an Ge active layer in optoelectronic devices totally compatible with CMOS technology [1] [2] [3] [4] [5]. It has been shown that Ge could become direct band gap material when applying a tensile strained value of 1.9% on Ge layer [6].…”

Section: Introductionmentioning

confidence: 99%

RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

Phuong¹

2017

OPJ

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Section: Introductionmentioning

confidence: 99%

A New Approach for Heavy N-Doping Process in Ge Epilayers Using Specific Solid Source

Phuong¹

2018

OPJ

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As an indirect band gap material, Germanium (Ge) has low efficiency of radiative recombination in the wavelength area of about 1550 nm. However, the difference between the direct and indirect band gap is very small (~140 meV) and photoluminescence emission ability of Ge could be greatly enhanced by heavy n-doping process. In this work, Ge growth directly on Si (001) substrate by molecular beam epitaxial (MBE) technique and a high n-doping level in Ge was obtained owning to using GaP decomposition source. The GaP solid source produces P 2 molecules instead of P 4 molecules, which have higher sticking coefficient than that of P 4 comparing to the traditional doping method from PH 3 gas precursor molecules. The dependence of optical property on Ge film thickness is also studied. The out-diffusion phenomenon of phosphorus dopant has been observed through SIMS profile analysis. An activated phosphorus concentration can be achieved up to more than 2 × 10 19 atoms•cm −3 confirmed by Hall effect measurement. This result contributes to realization of Ge-on-Si devices for optoelectronic applications.

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Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Cited by 26 publications

References 27 publications

Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

A New Approach for Heavy N-Doping Process in Ge Epilayers Using Specific Solid Source

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Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Cited by 26 publications

References 27 publications

Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

A New Approach for Heavy N-Doping Process in Ge Epilayers Using Specific Solid Source

Contact Info

Product

Resources

About

Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

Mn₅Ge₃C_0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer