RETRACTED: Phosphorus Dopant Distribution in Highly N-Doped Ge Film on Si(001) Substrate Using Specific GaP Solid Source

Phuong, Luong Thi Kim

doi:10.4236/opj.2017.75007

Cited by 1 publication

(3 citation statements)

References 14 publications

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“…A similar cap has been reported for MBE growth with GaP sources. 24,25) To investigate the effect of a cap on the incorporation of P and In in ZnTe thin films, P-doped ZnTe samples were grown at various InP fluxes with a cap as in the first experiment.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…For the P source in MBE (apart from using an expensive valved cracker cell for P) a compound material such as InP and GaP is often used because the P raw material is difficult to handle in a vacuum due to its high vapor pressure even at low temperature. [19][20][21][22][23][24][25] In addition, InP and GaP can supply a P 2 molecular beam, which has a higher sticking coefficient than that of a P 4 molecular beam. [21][22][23][24][25] In this study, we investigated the MBE growth of P-doped ZnTe using InP as the dopant source.…”

Section: Introductionmentioning

confidence: 99%

“…[19][20][21][22][23][24][25] In addition, InP and GaP can supply a P 2 molecular beam, which has a higher sticking coefficient than that of a P 4 molecular beam. [21][22][23][24][25] In this study, we investigated the MBE growth of P-doped ZnTe using InP as the dopant source. Also, in order to suppress In incorporation in the film, the effect of a dome-shaped cap mounted on the outlet of the InP effusion cell was investigated.…”

Section: Introductionmentioning

confidence: 99%

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Growth of phosphorus-doped ZnTe thin films by molecular beam epitaxy using InP as the dopant source

Mustofa

Mishima

Saito

et al. 2023

Jpn. J. Appl. Phys.

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P-doped ZnTe thin films were grown by molecular beam epitaxy on ZnTe (100) substrates using InP as a phosphorus supply under various different InP flux. Secondary ion mass spectroscopy (SIMS) analyses showed that P concentration in ZnTe thin films increases with increasing the InP flux although In atoms were also incorporated in the films. To suppress In incorporation, the outlet of the InP cell was modified by mounting a dome-shaped cap and a disk-shaped plate with small holes. As a result, P concentration decreases almost one order of magnitude as compared to the films grown without the cap but the significant reduction of In incorporation was confirmed by the SIMS and photoluminescence spectrum. A P-related acceptor bound exciton (Ia) peak was observed in the P-doped ZnTe thin film grown with the cap and the intensity of Ia emission increases after the annealing, indicating the activation of P acceptor.

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Section: Experimental Methodsmentioning

confidence: 99%