Molecular Beam Epitaxy and Characterization of Layered In<sub>2</sub>Se<sub>3</sub> Films   Grown on Slightly Misoriented (001)GaAs Substrates

Ohtsuka, T.; Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

doi:10.1143/jjap.38.668

Cited by 17 publications

(13 citation statements)

References 13 publications

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“…In these films, the cross-sectional FE-SEM image showed that the layered structures inclined from the GaAs (0 0 1) substrate by about 541. Similar inclination of the c-axis from the GaAs (0 0 1) substrate is reported by Ohtsuka et al [8]. Therefore, the inclination of c-axis of a-In 2 Se 3 is probably responsible for the appearance of the (1 0 1 4) weak peak.…”

Section: Article In Presssupporting

confidence: 86%

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Kato

Utsugi

Ohara

et al. 2009

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 86%

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Kato

Utsugi

Ohara

et al. 2009

Journal of Crystal Growth

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“…35 This value is not that different from resistivities reported here on polycrystalline ␥ films. Further investigation is required in order to understand the fundamental mechanism of conduction in ␥ In 2 Se 3 .…”

Section: B Microstructure and Crystallizationmentioning

confidence: 43%

Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Chaiken

Nauka

Gibson

et al. 2003

Journal of Applied Physics

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Articles you may be interested inPhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Structural and electronic properties of amorphous and single-phase polycrystalline films of ␥and -In 2 Se 3 have been measured. The effect of deposition conditions on the film phase was studied extensively. The stable ␥ phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable phase nucleates at the film surface and has a moderate resistivity. The microstructures of polycrystalline hot-deposited and postannealed, cold-deposited ␥ films are quite different but their electronic properties are similar. The increase in the resistivity of amorphous In 2 Se 3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In 2 Se 3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.

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“…γ-In 2 Se 3 has a direct bandgap of approximately 1.9 eV [12]. Until now, we reported the epitaxial growth of Ga 2 Se 3 , α-In 2 Se 3 and γ-In 2 Se 3 films by molecular beam epitaxy (MBE) and anisotropic features in the ordered structures [1][2][3][13][14][15][16]. Multiple-junction solar cells have attracted considerable attension for achieving higher PV efficiencies than single junction ones [17].…”

Section: Introductionmentioning

confidence: 99%

Structural control of In ₂ Se ₃ polycrystalline thin films by molecular beam epitaxy

Okamoto

Nakada

Aoki

et al. 2006

Phys. Status Solidi (c)

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Structural control of In 2 Se 3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In 2 Se 3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400°C. VI/III ratio greatly affected crystal structure of In 2 Se 3 polycrystalline films. Mixtures of α-In 2 Se 3 and γ-In 2 Se 3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In 2 Se 3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In 2 Se 3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In 2 Se 3 . Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm 2 ) were approximately 10 -9 and 10 -5 S/cm in the γ-In 2 Se 3 polycrystalline thin films, respectively.

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Molecular Beam Epitaxy and Characterization of Layered In₂Se₃ Films Grown on Slightly Misoriented (001)GaAs Substrates

Cited by 17 publications

References 13 publications

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Structural control of In ₂ Se ₃ polycrystalline thin films by molecular beam epitaxy

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Molecular Beam Epitaxy and Characterization of Layered In2Se3 Films Grown on Slightly Misoriented (001)GaAs Substrates

Cited by 17 publications

References 13 publications

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio

Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Structural control of In 2 Se 3 polycrystalline thin films by molecular beam epitaxy

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Product

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Molecular Beam Epitaxy and Characterization of Layered In₂Se₃ Films Grown on Slightly Misoriented (001)GaAs Substrates

Structural control of In ₂ Se ₃ polycrystalline thin films by molecular beam epitaxy