Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Lee, W.C.; Chin, Barry L.; Chu, L. K.; Lin, Tsung-Hsien; Lee, Y.J.; Tung, L. T.; Lee, C.H.; Hong, M.; Kwo, J.

doi:10.1016/j.jcrysgro.2008.11.045

Cited by 18 publications

(7 citation statements)

References 19 publications

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“…27 Gate leakage currents have been derived form I-V measurements and are compared by the respective values at +1 V gate bias. The obtained values compete well with results published in literature by other groups, 28,29 and are plotted as a function of EOT in Fig. 4.…”

supporting

confidence: 89%

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

Abermann

Bethge

Henkel

et al. 2009

Applied Physics Letters

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We investigate ultrathin ZrO2/La2O3 high-k dielectric stacks on germanium grown by atomic layer deposition. La2O3 is deposited from tris(N,N′-diisopropylformamidinate)-lanthanum and oxygen. Interfacial layer-free oxide stacks with a relative dielectric constant of 21 and equivalent oxide thickness values as low as 0.5 nm are obtained. Metal oxide semiconductor capacitors with platinum as the gate electrode exhibit well-behaved capacitance-voltage characteristics, gate leakage current densities in the range of 0.01–1 A/cm2, and interface trap densities in the range of ∼3×1012 eV−1 cm−2.

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supporting

confidence: 89%

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

Abermann

Bethge

Henkel

et al. 2009

Applied Physics Letters

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“…The study of GeO 2 /Ge becomes inevitable as a result of the desire to obtain an interface that is similar to that of SiO 2 /Si with the oxide downsized to a few atomic layers. Researchers on Ge have been naturally inclined to take the established Si knowledge to propose the Ge MOS structure, and intensive research [15,16,17,18,19,20] and industry-scale development efforts in the Ge MOS have been undertaken to realize the product. Nevertheless, there is a dearth of fundamental research on Ge, largely because the Ge(001)-2 × 1 surface undergoes a similar reconstruction to that of Si(001)-2 × 1 and the surface and interfacial behaviors of Ge(001)-2 × 1 are believed to be no different from those of Si(001)-2 × 1.…”

Section: Introductionmentioning

confidence: 99%

Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission

et al. 2019

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In this paper, we investigate the embryonic stage of oxidation of an epi Ge(001)-2 × 1 by atomic oxygen and molecular O2 via synchrotron radiation photoemission. The topmost buckled surface with the up- and down-dimer atoms, and the first subsurface layer behaves distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O2 molecules become dissociated upon reaching the epi Ge(001)-2 × 1 surface. One of the O atoms removes the up-dimer atom and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen preferentially adsorbed on the epi Ge(001)-2 ×1 in between the up-dimer atoms and the underneath subsurface atoms, without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. They both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment that was originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O2, which might account for the low reliability in the Ge-related metal-oxide-semiconductor (MOS) devices.

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“…This may not be true for much larger permittivities, as seen for materials like HfO 2 , whose dielectric constant is ε = 16 − 22 [78][79][80][81][82], which could push C grd-pl up to C grd-pl ≈ 0.187 aF/nm, and then only about a factor of two smaller than C SWCNT i . Another instance where the order of dominance switches, is that of the liquid gating, which has been used to achieve strong field effect action on carbon nanotubes when the nanotube is immersed in solution.…”

Section: Intrinsic Quantum Capacitances Of Nanocables Andmentioning

confidence: 99%

Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides

Krowne

2010

Journal of Nanomaterials

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Here we calculate the intrinsic quantum capacitance of RuO2nanowires and RuO2/SiO2nanocables (filled interiors of nanotubes, which are empty), based upon available ab initio density of states values, and their conductances allowing determination of transmission coefficients. It is seen that intrinsic quantum capacitance values occur in the aF range. Next, expressions are derived for Schottky junction andp-njunction capacitances of nanowires and nanocables. Evaluation of these expressions for RuO2nanowires and RuO2/SiO2nanocables demonstrates that junction capacitance values also occur in the aF range. Comparisons are made between the intrinsic quantum and junction capacitances of RuO2nanowires and RuO2/SiO2nanocables, and between them and intrinsic quantum and junction capacitances of carbon nanotubes. We find that the intrinsic quantum capacitance of RuO2-based nanostructures dominates over its junction capacitances by an order of magnitude or more, having important implications for energy and charge storage.

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Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Cited by 18 publications

References 19 publications

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission

Nanowire and Nanocable Intrinsic Quantum Capacitances and Junction Capacitances: Results for Metal and Semiconducting Oxides

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