Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures

Thainoi, Supachok; Kiravittaya, Suwit; Poempool, Thanavorn; Zon,; Nuntawong, Noppadon; Sopitpan, Suwat; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak

doi:10.1016/j.jcrysgro.2017.01.011

Cited by 11 publications

(3 citation statements)

References 12 publications

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“…In addition, the height of QNS is also limited, as the InSb adatoms do not have enough energy to migrate to the top of the QNSs due to the usage of low growth temperature. Observations of elongated nanostructures similar to InSb QNSs obtained in this work in other material systems have also been reported …”

Section: Resultssupporting

confidence: 83%

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Rongrueangkul

Srisinsuphya

Thainoi

et al. 2019

Physica Status Solidi (b)

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The dimensions and morphologies of quantum nanostructures are keys to controlling an operating wavelength to a desirable wavelength range due to the quantum effect. The dimension and morphology evolutions of InSb/InAs quantum nanostructures grown by molecular beam epitaxy with respect to the number of InSb monolayers (MLs) are investigated. The formation of the quantum nanostructures is dominated by lateral growth, in which the morphology is further elongated as the number of MLs is increased. Such an anisotropic growth is explained by the difference in the surface energy along each direction, which corresponds to different atomic arrangements in the crystalline structure of InSb. Cross‐sectional transmission electron microscopic images show a reduction in the lateral dimension and an increase in the height of the embedded InSb quantum nanostructures when they are embedded in the InAs matrix. The results herein provide a means for obtaining the precise control over dimensions and morphologies of the InSb/InAs nanostructures, which is essential for extending the operating wavelength further into the mid‐infrared region.

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Section: Resultssupporting

confidence: 83%

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Rongrueangkul

Srisinsuphya

Thainoi

et al. 2019

Physica Status Solidi (b)

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“…Advantages of using InSb compared with other compound semiconductors originate from its intrinsic properties as it is a well‐known bulk material for infrared (IR) detectors . Further engineering of InSb material properties is possible by realizing InSb nanostructures …”

Section: Introductionmentioning

confidence: 99%

“…Recently, we have studied the growth of InSb nanostructures on GaAs substrate in details . In such case, by applying unusually low growth rates for InSb growth (0.010–0.018 monolayer/s (ML/s)), we have realized so‐called twin InSb/GaAs quantum nano‐stripes.…”

Section: Introductionmentioning

confidence: 99%

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Posri

Thainoi

Kiravittaya

et al. 2018

Phys. Status Solidi A

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In this study, the growth and photoluminescence (PL) properties of InSb/ GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski-Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 AE 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at %1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of %0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of %20 meV from InSb nano-stripe emission is extracted from the temperaturedependent PL spectroscopy.

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Recent advancements in multifunctional applications of sol-gel derived polymer incorporated TiO2-ZrO2 composite coatings: A comprehensive review

Simon

George

Sajna

et al. 2021

Applied Surface Science Advances

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Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures

Cited by 11 publications

References 12 publications

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Recent advancements in multifunctional applications of sol-gel derived polymer incorporated TiO2-ZrO2 composite coatings: A comprehensive review

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