2009
DOI: 10.1016/j.jcrysgro.2008.10.026
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Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier

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Cited by 6 publications
(8 citation statements)
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“…6 and showed a greater increase in the coupling strength as compared to that the structures studied in ref. 8. Optical absorption measurements revealed that the IBT-EW of the new CDQWs was successfully red-shifted to over 1450 nm.…”
mentioning
confidence: 96%
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“…6 and showed a greater increase in the coupling strength as compared to that the structures studied in ref. 8. Optical absorption measurements revealed that the IBT-EW of the new CDQWs was successfully red-shifted to over 1450 nm.…”
mentioning
confidence: 96%
“…In order to red-shift the IBT-EW of the CDQWs, the following lattice matched and mismatched CDQWs were studied: (1) CDQWs consisting of In 0:53 Ga 0:42 As wells and In 0:52 Al 0:48 As center barriers 6) and (2) In 0:8 Ga 0:2 As wells and extremely thin AlAs center barriers. 8) The reason for examining both structures was to study the effect of an increase in the coupling strength between two wells. This aim leads lowering the 1st quantized energy level.…”
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confidence: 99%
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