Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Calvo, Marta Rio; Rodriguez, Jean-Baptiste; Cerutti, L.; Ramonda, Michel; Patriarche, G.; Tournié, E.

doi:10.1016/j.jcrysgro.2019.125299

Cited by 7 publications

(5 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The growth conditions of the GaSb layers presented in this paper are summarized in the Supporting Information, and more details can be found in reference. [ 57 ]…”

Section: Introductionmentioning

confidence: 99%

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Calvo

Rodriguez

Cornet

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐V semiconductors on Silicon is still the subject of great debate, despite the impressive number of studies focusing on this topic in the last past decades. The control of the layer phase is of major importance for the future realization of photonic integrated circuits that include efficient light sources or for new nano‐electronic devices, for example. Here, it is experimentally demonstrated that the main‐phase domain overgrows the anti‐phase domains (APDs) because it grows faster. A large‐scale analysis of the phase evolution based on reflection high‐energy electron diffraction and atomic force microscopy in the case of the molecular beam epitaxy of GaSb on Silicon (001) substrate is presented. The growth rate difference between the two domains is accurately measured and is shown to come from the atomic step distribution at the III‐V surface. The influence of the substrate preparation as well as of the growth condition on this distribution is also clarified.

show abstract

“…The growth conditions of the GaSb layers presented in this paper are summarized in the Supporting Information, and more details can be found in reference. [ 57 ]…”

Section: Introductionmentioning

confidence: 99%

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Calvo

Rodriguez

Cornet

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…The first is the serious lattice mismatch between the antimonide semiconductors and the Si substrate; the second is that the thermal expansion coefficients of the two materials are quite different, resulting in very large thermal stress during the crystal growth process; the last is the diverse polarity of the chemical bonds for the antimonides and Si. Due to the existence of the above three problems, antimonides grown on Si(100) substrates by MBE and MOCVD inevitably suffer from various defects, such as misfit sites, dislocations, antiphase domains, micro twin crystals, or micro cracks, which would degrade the device performance significantly in terms of high G-R currents and low QE [34,[181][182][183][184][185][186]. At present, only IQE Inc. of the United States reported that InAsSb-based MWIR PDs were successfully fabricated on a 6 inch Si substrate by using multilayer buffer layers, and an FPA detector was also prepared that achieved MWIR imaging at 77 K [187,188].…”

Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 99%

“…At present, only IQE Inc. of the United States reported that InAsSb-based MWIR PDs were successfully fabricated on a 6 inch Si substrate by using multilayer buffer layers, and an FPA detector was also prepared that achieved MWIR imaging at 77 K [187,188]. In addition, in the growth of InAs/InAsSb T2SL detectors on Si, although insitu thermal annealing [185], an offcut Si substrate [34,186], and AlSb buffer layers [37] can improve the crystal quality to a certain extent, the defect density with epitaxial antimonides on Si is still too high. More efforts could be made to solve this problem in order to achieve HOT or even uncooled detectors.…”

Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

show abstract

“…Gallium antimonide (GaSb) is a valuable material for applications in field-effect transistors, multi-junction solar cells, lasers, infrared detectors, and Shockley diodes. In addition, the molecular beam epitaxial is a common method to grow materials. − Moreover, the reason why the development opportunity is taken by various electronic devices is that GaSb keeps some advantages of physical properties …”

Section: Introductionmentioning

confidence: 99%

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Zhu

Kang

et al. 2023

J. Phys. Chem. C

View full text Add to dashboard Cite

Alloying is one of the most common approaches to modulate the properties of semiconductors, such as indium antimonide (InSb) with practical applications in mid-infrared optoelectronics. Thermal conductivity plays a key role in governing the operating performance of devices, and the high-efficiency regulation is of great significance to desirable applications. In this study, we studied the thermal transport properties of InSb, GaSb, and their Ga x In 1−x Sb alloys by solving the Boltzmann transport equation based on first-principles calculations. The thermal conductivity of Ga x In 1−x Sb alloys (x = 0.25, κ = 9.21 Wm −1 K −1 ; x = 0.5, κ = 11.22 Wm −1 K −1 ; and x = 0.75, κ = 15.45 Wm −1 K −1 ) is enhanced compared with that of InSb (κ = 5.15 Wm −1 K −1 ), which is unlike the conventional belief that alloying usually reduces thermal conductivity. Through fundamental analysis of phonon transport properties, the higher phonon group velocity and phonon relaxation time caused by the weak phonon anharmonicity lead to higher thermal conductivity of the Ga x In 1−x Sb alloys. The weakened polarization of Ga x In 1−x Sb alloys occurring in the alloying process generates the increased thermal conductivity, which can be figured out by analyzing the orbital-projected electronic density of states and the electron localization functions. The underlying mechanism of unconventional high thermal conductivity of the Ga x In 1−x Sb alloys in this study would provide guidance for the device applications accompanied by thermal transport.

show abstract

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Cited by 7 publications

References 21 publications

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Contact Info

Product

Resources

About

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Cited by 7 publications

References 21 publications

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Unexpected Enhanced Thermal Conductivity of GaxIn1–xSb Ternary Alloys

Contact Info

Product

Resources

About

Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys