Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Calvo, Marta Rio; Rodriguez, J. B.; Cornet, Charles; Cerutti, L.; Ramonda, Michel; Trampert, A.; Patriarche, G.; Tournié, E.

doi:10.1002/aelm.202100777

Cited by 25 publications

(24 citation statements)

References 57 publications

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“…We have recently investigated in detail the MBE growth of GaSb layers on on-axis (001)Si substrates, and we have demonstrated that careful optimization of both the Si surface preparation and the GaSb nucleation stage results in one polarity domain, the APD, being overgrown by the other domain, so-called the main polarity domain (Fig. 3 ) 93 . The [110] direction of the residual miscut and high-temperature annealing of the Si substrate prior to epitaxy are key points that promote a well-ordered organization of the steps at the Si surface 93 .…”

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

“…3 ) 93 . The [110] direction of the residual miscut and high-temperature annealing of the Si substrate prior to epitaxy are key points that promote a well-ordered organization of the steps at the Si surface 93 . In turn, the different incorporation rates of group-III elements at step edges result in the main polar domains growing faster than the APDs, and thus in the burying of the latter 94 .…”

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

“…The GaSb thickness needed to bury the APDs varies with the residual miscut angle. It is typically around 250, 500, and 1000 nm for residual miscuts of 1, 0.5, and 0.2, respectively 93 . Such GaSb-on-Si layers can then be used as templates for further growth 95 .…”

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

“…In spite of indisputable progress, these DLs were still grown on large-miscut substrates, incompatible with PICs development. The second breakthrough came when we demonstrated the ability to grow GaSb layers on on-axis Si substrates thanks to APD burying within a buffer layer 93 . More details are given in the section “Epitaxial growth of antimonide heterostructures on (001)Si substrates” above and in ref.…”

Section: Gasb-based Laser Diodes Grown On Simentioning

confidence: 99%

“…More details are given in the section “Epitaxial growth of antimonide heterostructures on (001)Si substrates” above and in ref. 93 . Detailed results for DLs grown on substrates with a 0.5° residual-miscut angle were reported in ref.…”

Section: Gasb-based Laser Diodes Grown On Simentioning

confidence: 99%

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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

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Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

Section: Gasb-based Laser Diodes Grown On Simentioning

confidence: 99%

Section: Gasb-based Laser Diodes Grown On Simentioning

confidence: 99%

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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Gilbert

Ramonda

Cerutti

et al. 2023

Advanced Optical Materials

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This work reports on the precise control of III‐V semiconductors’ antiphase domain formation and evolution during the epitaxial growth on an “on‐axis” Si (001) substrate with a very low but controlled miscut. Especially, it is shown how, starting from a Si surface having a regular array of terraces, the crystal polarity of thin GaAs epilayers grown by molecular‐beam epitaxy is defined through the Si surface topology, leading to a quasi‐periodic 1D pattern of antiphase domains in the GaAs layer. Furthermore, this work demonstrates how this configuration breaks the symmetry between the two different III‐V phases, without any step‐flow‐induced asymmetry. Following this strategy, an early burying of antiphase domains is demonstrated in GaAs epitaxially grown on a low‐miscut Si substrate. This study generalizes previous models describing antiphase domain formation and evolution and establishes the important growth parameters for the development of high crystal quality III‐V semiconductor devices monolithically integrated on low‐miscut silicon substrates.

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Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Gilbert,

Ramonda,

Patriarche

et al. 2024

Advanced Physics Research

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The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the differences between the materials are responsible for the formation of crystal defects, in particular threading dislocations (TDs) and antiphase domains (APDs) delineated by antiphase boundaries (APBs), which degrade the device's performance. A new technique is demonstrated to achieve thin APBs‐free GaSb buffer layers grown on Si substrates. The original idea presented in this paper is to introduce a GaAs layer into the buffer to promote faster burial of APDs. Two strategies are compared; the first one involves the complete APDs burying in GaAs before growing GaSb, while the second one uses a thin GaAs layer before burying the APDs in the GaSb layer. APB‐free buffer layers as thin as 215/400 nm have been obtained using the first method, which represents a factor of 2/4 thickness reduction compared to the previous results for both 0.5° and 0.2° miscut angles.

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Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Cited by 25 publications

References 57 publications

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

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