Molecular-beam epitaxy of Heusler alloy thin films epitaxially grown on Si(001)

Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

“…PtLuSb (001) films were grown by molecular beam epitaxy (MBE) on relaxed Al0.1In0.9Sb films grown on GaAs (001) substrates. MBE has produced high quality half-Heusler films [12][13][14][15] as well as offers the ability to control elemental fluxes and abruptly terminate surfaces. Additionally, MBE provides submonolayer deposition control over elemental species, allowing the surface reconstructions of PtLuSb (001) films to be evaluated as a function of the termination procedure.…”

Induced magnetic anisotropy and spin polarization in pulsed laser–deposited Co2MnSb thin films

“…17 However, in the case of Co 2 MnSi films grown epitaxially on Si(001), a uniaxial contribution to the anisotropy was only observed for films grown at grazing-incidence fluxes. 18 Films grown at normal incidence did not exhibit uniaxial anisotropy. In this study, all Co 2 MnSb films were grown with the PLD plume at normal incidence with respect to the incident plume direction, and the substrates were positioned in the center of the plume.…”

Polarized neutron reflectometry of the influence of Fe/Si, Fe/FeSi2 and Au/Fe interfaces on the magnetic properties of epitaxial Fe films

“…Fe layers (27 nm thick) were evaporated, at room temperature and at normal incidence with respect to the Si(111) substrate surface. This deposition geometry prevents the formation of an anisotropic roughness, which can lead to some specific magnetic anisotropy properties [16][17][18]. The atomic structure of the Fe films has been previously determined on the basis of LEED, X-ray photoelectron diffraction (XPD) and X-ray diffraction (XRD) measurements [19][20][21].…”