Molecular beam epitaxy of In0.23Ga0.77Sb Grown on GaAs and GaSb substrates and the fabrication of planar In0.23Ga0.77Sb transferred electron devices

Abstract

MBF In0.23Ga0.73Sb films are grown on semi‐insulating Cr‐doped GaAs and undoped GaSb substrates, and the first planar MBE‐In0.23Ga0.77Sb transferred electron devices are fabricated and then evaluated. In the epitaxial growth process, an epitaxial layer structure such as the selection of a substrate and insertion of a high‐resistivity buffer layer of Al0.9In0.1Sb is a significant factor influencing the electrical properties of the In0.23Ga0.77Sb active layer and then determine the threshold electric field of In0.23Ga0.77Sb/Al0.9In0.1Sb/GaSb epitaxial layer structure by the application of a high‐resistivity buffer layer between the In0.23Ga0.77Sb film and the GaSb substrate. In the transferred electron device fabrication process, the contact properties of alloyed AuSn metallization to n‐In0.23Ga0.77Sb film are also investigated and evaluated.

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

“…Ga 0.6 In 0.4 Sb photodiodes have been grown by metal organic vapour phase epitaxy (MOVPE) for detection at 2.5 µm [2]. Thick layers of Ga 0.77 In 0.23 Sb were also grown by molecular beam epitaxy (MBE) for the fabrication of planar transferred electron devices [3]. To our knowledge, light-emitting diodes (LEDs) grown by MOVPE are the only devices using compressively strained GaInSb/GaSb quantum wells (QWs) [4].…”