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The chemical etching of (100)‐oriented normalGaSb substrate by several different treatments has been studied. The morphology of the MBE‐grown normalGaSb films strongly depends on the substrate preparation prior to epitaxial growth. It is shown that some defects which originate at the substrate propagate to the surface of the films, in case of the improper chemical treatment, and degrade the morphology of the films. The excellent surface morphology of the film could be obtained reproducibly by treating the substrate with CH3COOH‐HNO3‐HF and subsequent HNO3‐normalHCl solutions.

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MBF In0.23Ga0.73Sb films are grown on semi‐insulating Cr‐doped GaAs and undoped GaSb substrates, and the first planar MBE‐In0.23Ga0.77Sb transferred electron devices are fabricated and then evaluated. In the epitaxial growth process, an epitaxial layer structure such as the selection of a substrate and insertion of a high‐resistivity buffer layer of Al0.9In0.1Sb is a significant factor influencing the electrical properties of the In0.23Ga0.77Sb active layer and then determine the threshold electric field of In0.23Ga0.77Sb/Al0.9In0.1Sb/GaSb epitaxial layer structure by the application of a high‐resistivity buffer layer between the In0.23Ga0.77Sb film and the GaSb substrate. In the transferred electron device fabrication process, the contact properties of alloyed AuSn metallization to n‐In0.23Ga0.77Sb film are also investigated and evaluated.

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