Molecular beam epitaxy of InAlN∕GaN heterostructures for high electron mobility transistors

Katzer, D. Scott; Storm, David F.; Binari, S.C.; Shanabrook, B. V.; Torabi, A.; Zhou, Lin; Smith, David J.

doi:10.1116/1.1927103

Cited by 40 publications

(36 citation statements)

References 11 publications

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“…On the other hand, InN can only be grown at low temperatures and high ammonia partial pressures, whereby high ammonia partial pressures have also a strong effect on the AlN growth rate. However, these problems have been widely overcome in first promising experiments [8][9][10][11]. In particular, it has been found that the insertion of an optimized AlN interlayer reduces the alloy related interface roughness and improves therefore the electron mobility dramatically as shown in Fig.…”

Section: Materials Propertiesmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.

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Section: Materials Propertiesmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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“…5,6 Recently, the insertion of a thin ͑ϳ1 ML͒ film of AlN in the HEMT structure has been shown to improve the device performance by increasing the two dimensional electron gas ͑2DEG͒ confinement and reducing alloy scattering. [7][8][9] However, much less work has been done on AlN/GaN heterostructure for HEMT devices mainly due to the difficulty in growing high-quality AlN barrier layers on GaN by either metal organic chemical vapor deposition 10 ͑MOCVD͒ or molecular beam epitaxy ͑MBE͒. [11][12][13] Nonetheless, the expected reduction in short channel effects and lower threshold voltages, using ultrathin AlN barrier layers, makes these structures of great interest for very high frequency and high power applications.…”

mentioning

confidence: 99%

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Dabiran

Wowchak

Osinsky

et al. 2008

Applied Physics Letters

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Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm2/V s) and sheet charge density (>3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

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“…[1][2][3][4][5] Despite their potential applications in electronic and optical devices, the fabrication of high quality lattice-matched InAlN epitaxial layers on GaN remains challenging task irrespective of employing sophisticated epitaxial deposition methods such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). The spinodal phase separation and composition inhomogeneity due to the large thermodynamic miscibility gap caused by the large difference of covalent bond length between AlN and InN makes it difficult in alloying at optimum growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

Jeganathan

Shimizu

2014

AIP Advances

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We investigate the role of growth temperature on the optimization of lattice-matched In0.17Al0.83N/GaN heterostructure and its structural evolutions along with electrical transport studies. The indium content gradually reduces with the increase of growth temperature and approaches lattice-matched with GaN having very smooth and high structural quality at 450ºC. The InAlN layers grown at high growth temperature (480ºC) retain very low Indium content of ∼ 4 % in which cracks are mushroomed due to tensile strain while above lattice matched (>17%) layers maintain crack-free compressive strain nature. The near lattice-matched heterostructure demonstrate a strong carrier confinement with very high two-dimensional sheet carrier density of ∼2.9 × 1013 cm−2 with the sheet resistance of ∼450 Ω/□ at room temperature as due to the manifestation of spontaneous polarization charge differences between InAlN and GaN layers.

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Molecular beam epitaxy of InAlN∕GaN heterostructures for high electron mobility transistors

Cited by 40 publications

References 11 publications

Status of the Emerging InAlN/GaN Power HEMT Technology

Status of the Emerging InAlN/GaN Power HEMT Technology

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

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