Molecular beam epitaxy of InN nanowires on Si

Sarwar, Adil; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

doi:10.1016/j.jcrysgro.2015.07.024

Cited by 10 publications

(5 citation statements)

References 37 publications

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“…Therefore, it is clear that during the second step, the multiple small InN nanowires observed on sample A (Figure a) merge together to form one large diameter InN nanowire via Ostwald ripening. Evidence of such ripening was previously reported in the self-assembled growth of InN on Si . This merging process occurs because the small InN nanowires (on the top surface and sidewalls of GaN nanowires) are thermodynamically unstable at elevated temperature ( T sub = 460 °C).…”

Section: Results and Discussionmentioning

confidence: 62%

“…Moreover, the growth kinetics of InN significantly change with temperature making it more difficult to control morphology and material quality than for GaN , In an effort to circumvent these problems the use of nanostructures has been investigated, and InN nanowires have been demonstrated on Si, AlN, GaN, and even brass. − These provide pure, high quality material, but lack the order and convenience of thin films. Nanowires have also been investigated as strain-compliant templates for the coalescence of reduced defect density films. , However, the wurtzite InN nanowires showed multiple crystalline rotations when grown on substrates with lower hexagonal symmetry, such as Si . Here, we explore the use of a top-down fabricated GaN nanowire template as a potential substrate for the growth of high material-quality InN.…”

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confidence: 99%

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Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

Sarwar¹,

Leung

Wang

et al. 2018

Crystal Growth & Design

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By using multiple growth steps that separate the nucleation and growth processes, we show that nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy. The InN nanostructures form into well-defined hexagonal prisms with pyramidal tops. Micro-photoluminescence (μ-PL) is carried out at low temperature (LT: 28.2 K) and room temperature (RT: 285 K) to gauge the relative material quality of the InN nanostructures. Nanopyramidal prisms grown using a three-step growth method are found to show superior quantum efficiency. Excitation and temperature dependent μ-PL demonstrates the very high quality and nearly intrinsic nature of the ordered InN nanostructure arrays.

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Section: Results and Discussionmentioning

confidence: 62%

mentioning

confidence: 99%

Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

Sarwar¹,

Leung

Wang

et al. 2018

Crystal Growth & Design

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“…Three peaks were identified: the Si substrate peak coming from (111) planes, and two peaks from (0002) diffracting planes corresponding to the AlN and the InN. Dotted lines were positioned considering lattice parameters reported in the literature [14,21,22]. The peaks of the AlN layer and the InN NCs matched with the reported (dotted lines); therefore, we have NCs completely relaxed in hexagonal phase, which is consistent with the RHEED results.…”

Section: Results and Discussionmentioning

confidence: 99%

“…Thus far, most of the published work regarding InN growth is for temperatures higher than 400∘normalC [9,10,13,14]. For example, Kim et al performed a study of InN growth at 500∘normalC.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

et al. 2019

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Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400∘normalC of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.720.166667emeV at 200.166667emnormalK for the InN nanocolumns, confirmed by photoreflectance spectroscopy.

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“…Therefore, it is of great importance to prepare regularly shaped InN NWs and gain a comprehensive understanding of their growth process. Although a few achievements have been obtained so far, more efforts are still required to understand the growth mechanism of nontapered InN NWs . Stoica and co‐workers have established a quasi‐equilibrium model to illustrate the relationship between the growth parameters and the morphologies of InN NWs.…”

Section: Introductionmentioning

confidence: 99%

Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms

Gao

Lei

et al. 2017

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The effects of the growth parameters on the uniformity and the aspect ratio of InN nanowires grown on Si(111) substrates have been studied systematically, and a modified quasi-equilibrium model is proposed. The growth temperature is of great importance for both the nucleation of the nanowires and the migration of In and N atoms, thus affecting the uniformity of the InN nanowires. In order to improve the uniformity of the InN nanowires, both traditional substrate nitridation and pre-In-droplet deposition have been implemented. It is found that the substrate nitridation is favorable for the nucleation of InN nanowires. However, the initial In atoms adhered to the substrate are insufficient to sustain the uniform growth of the InN nanowires. We have found that the initial In droplet on the substrate is not only advantageous for the nucleation of the InN nanowire, but also favorable for the In atom equilibrium between the initial In droplets and the direct In flux. Therefore, InN nanowires with a uniform aspect ratio and optimal diameter can be achieved. The results reported herein provide meaningful insights to understanding the growth kinetics during the InN nanowires growth, and open up great possibilities of developing high-performance group III-nitride-based devices.

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Molecular beam epitaxy of InN nanowires on Si

Cited by 10 publications

References 37 publications

Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms

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