Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices

Lambrecht, A.; Herres, N.; Spanger, B.; Kuhn, S.; Böttner, H.; Tacke, M.; Evers, Jürgen

doi:10.1016/0022-0248(91)90377-h

Cited by 65 publications

(36 citation statements)

References 28 publications

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“…6 PbSe, the binary semiconductor that is the starting point for the present study, is an excellent thermoelectric semiconductor 7,8 that avoids the use of Te, which is not abundant in the earth's crust. Another element thought to be divalent, Eu, is known to increase the band gap of PbTe 9 and PbSe: 10,11 PbEuTe and PbEuSe have been used as the high-gap semiconductor in PbTe and PbSe double-heterojunction, quantum-well, tunable infrared diode lasers. 11 For these applications, the fact that Eu is divalent was one of its main advantages, as compared to other rare earth elements, since it allowed modification the band gap of the material without increasing the carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

“…Another element thought to be divalent, Eu, is known to increase the band gap of PbTe 9 and PbSe: 10,11 PbEuTe and PbEuSe have been used as the high-gap semiconductor in PbTe and PbSe double-heterojunction, quantum-well, tunable infrared diode lasers. 11 For these applications, the fact that Eu is divalent was one of its main advantages, as compared to other rare earth elements, since it allowed modification the band gap of the material without increasing the carrier concentration. Magnetic studies have been performed on PbEuTe [12][13][14][15] and PbEuSe 9,16,17 alloys and superlattices.…”

Section: Introductionmentioning

confidence: 99%

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Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Wiendlocha

Kim

Lee³

et al. 2017

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Wiendlocha

Kim

Lee³

et al. 2017

Phys. Chem. Chem. Phys.

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“…However, Molecular Beam Epitaxy (MBE) grown Pb 1Àx Sr x Se thin lms have been studied; they show that the lattice constant changes gradually following Vegard's law and the band gap tunable in a wide range with different SrSe contents. [30][31][32] Given the rock-salt structure and the lattice parameter 31 of 6.25Å for SrSe it is highly probable that an appreciable solubility of SrSe in PbSe in the bulk could be found. On the other hand, recent studies on thermoelectric PbTe with SrTe addition implied that SrTe leads to noticeable thermal conductivity reduction without signi-cantly impairing the carrier mobility, 33,34 which means the disorder might be benecial in Pb 1Àx Sr x Se alloys as well.…”

mentioning

confidence: 99%

Tuning bands of PbSe for better thermoelectric efficiency

Wang

Gibbs

Takagiwa

et al. 2014

Energy Environ. Sci.

227

192

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Improving the thermoelectric performance of PbSe over its previously reported maximum zT can be achieved by engineering its electronic band structure. We demonstrate here, using optical absorption spectra, first principles calculations, and temperature dependent transport measurements, that alloying PbSe with SrSe leads to a dramatic change of the band structure that increases the thermoelectric figure of merit, zT. The temperature where the two valence bands converge decreases with Sr addition. The zT value, when the carrier density is optimized, increases with Sr addition in Pb 1Àx Sr x Se and when x ¼ 0.08 a maximum zT of 1.5 at 900 K is achieved. The net benefit in zT comes from the band structure tuning even though in other thermoelectric solid solutions it is the thermal conductivity reduction from disorder that leads to net zT improvement. Broader contextBand engineering in semiconductors is important for their application in electronic or optoelectronic devices. For heavily doped thermoelectric semiconductors it is also crucial for the high zT found in PbTe 1Àx Se x , Pb 1Àx Mg x Te, and Mg 2 Si 1Àx Sn x . For high temperature bulk thermoelectrics, most of such engineering is realized by forming solid solutions. In this study we demonstrate successful band tuning of p-type PbSe, the slightly lower zT analog of the well-known thermoelectric compound PbTe, using Pb 1Àx Sr x Se solid solutions. It is well known that formation of solid solutions is desirable for thermoelectrics due to their lower thermal conductivities. We demonstrate here that the ability to change not only the band gap but also the relative positions of different band maxima provides another important benet for solid solutions as thermoelectrics. Actually, we found in these alloys that the reduction of lattice thermal conductivity by alloying has been compensated by the counter effect of the reduced carrier mobility, as also been found in the n-type solid solutions PbTe 1Àx Se x and PbSe 1Àx S x where simply forming solid solutions without the band engineering effect does not improve zT. Therefore we conclude that the change in the band structure with formation of solid solution accounts for the improvement of zT in p-type PbSe from 1.1 to 1.5 at 900 K.

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“…Since then, much of the growths of IV-VI materials have been performed on (1 1 1) BaF 2 substrates [5][6][7][8]. This is because high-quality BaF 2 is available commercially and has properties that well suited for lead salt materials growth such as, close lattice match, well-matched thermal expansion coefficient and its high bandgap is convenient for optical and electrical measurements.…”

Section: Introductionmentioning

confidence: 99%

MBE growth and characterization of IV–VI semiconductor thin-film structures on (110) BaF2 substrates

Zhao

Keay

et al. 2005

Journal of Crystal Growth

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Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices

Cited by 65 publications

References 28 publications

Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Tuning bands of PbSe for better thermoelectric efficiency

MBE growth and characterization of IV–VI semiconductor thin-film structures on (110) BaF2 substrates

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Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices

Cited by 65 publications

References 28 publications

Eu2+–Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu2+–Eu3+ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Tuning bands of PbSe for better thermoelectric efficiency

MBE growth and characterization of IV–VI semiconductor thin-film structures on (110) BaF2 substrates

Contact Info

Product

Resources

About

Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies

Eu²⁺–Eu³⁺ valence transition in double, Eu-, and Na-doped PbSe from transport, magnetic, and electronic structure studies