Molecular Beam Epitaxy of Transition Metal Monopnictides

Bell, Gavin R.

doi:10.1016/b978-0-12-812136-8.00001-3

Cited by 1 publication

(1 citation statement)

References 100 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The growth rate is limited by the Ta flux, while excess As is not incorporated into the film. This is similar to GaAs epitaxy, where stoichiometric growth may be achieved over a wide range of As/Ga flux ratios, and is consistent with other metal monopnictide systems [21]. Changes in growth temperature are likely achieving two things: 1) thermodynamically shifting which phase is the most energetically stable, and 2) modifying the effective As/Ta ratio as more As desorbs at higher temperatures.…”

Section: Resultssupporting

confidence: 82%

Thin film TaAs: developing a platform for Weyl semimetal devices

Nelson¹,

Rice²,

Kurleto³

et al. 2023

Preprint

View full text Add to dashboard Cite

MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications.We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure, using angle-resolved photoemission spectroscopy, Kelvin probe microscopy and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications.

show abstract

Section: Resultssupporting

confidence: 82%