Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures

Иванов, С. В.; Sorokin, Sergey; Sedova, I. V.

doi:10.1016/b978-0-12-812136-8.00027-x

Cited by 8 publications

(5 citation statements)

References 127 publications

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“…The need for a low Se/Ga flux ratio is confirmed by the experimental fact that the optimum conditions for the MBE growth of GaSe on GaAs(001) substrates correspond to the nearly stoichiometric ratio between the adsorbed Ga and Se adatoms on the growth surface [ 30 , 49 , 50 ]. An analysis of the available literature data, taking into account the dependence of Se incorporation coefficient on both substrate and cracking zone temperatures of the Se valve source [ 59 ], shows that the stoichiometric conditions can be estimated as corresponding to P Se /P Ga (BEP) ~ 12 and ~ 25 at T S = 400 °C and 500 °C, respectively, if standard Ga and Se valve cracking cells with T Se (cr) = 500 °C are used as molecular beam sources [ 28 ]. In our analysis, we used the measured P Se /P Ga (BEP) flux ratios needed to obtain a relatively smooth GaSe surface at various temperatures (350–450 °C) from [ 30 ], where a Se valve cracking cell with T Se (cr) = 950 °C was applied as a Se source, as well as data on GaSe layers grown by MBE using standard Ga and Se cells [ 29 , 49 , 50 , 51 ].…”

Section: Resultsmentioning

confidence: 99%

“…Taking account of difficulties in InSe/GaAs(001) heteroepitaxy, as well as the problems with high-temperature InSe growth on GaSe surface, we tried to realize the ZnSe/InSe/ZnSe quantum well (QW) heterostructures. The InSe/ZnSe looks as a promising heteropair for potential applications in the field of photonics and electronics, when taking into account the fact that the band line-up for the InSe/ZnSe interface was reported to be of strong type I [ 100 ] as well as the existence of matured MBE technology of ZnSe/GaAs(001) [ 59 ].…”

Section: Resultsmentioning

confidence: 99%

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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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“…Moreover, after the annealing step, the temperature drops from 600 to 300 • C. This process is relatively slow and, when the growth of the ZnSe cap is resumed, it probably proceeds at a somewhat elevated temperature (≈350 • C). The likely difference in the actual growth temperature reduces the Se sticking coefficient [26,27] and the Se/Zn ratio at the surface. Therefore, as in the case of MBE grown sample a, these phenomena may also enhance the Mn segregation.…”

Section: Resultsmentioning

confidence: 99%

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

et al. 2020

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The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

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“…In particular, the epitaxial CdSe/Zn(S,Se) QDs have been successfully used as an active region in laser heterostructures pumped optically or by an electron beam. 1,2 Besides, they have been recognized as promising candidates for room temperature single photon emission and production of photon pairs due to strong carrier confinement and distinct biexciton performance [3][4][5] . The self-formation of these nanostructures takes place when a CdSe insertion of a fraction monolayer (ML) thickness is deposited within a Zn(S,Se) matrix.…”

Section: Introductionmentioning

confidence: 99%

Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles

2016

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We report on the theoretical study of the hole states in II-IV quantum dots of a spherical and ellipsoidal shape, described by a smooth potential confinement profiles, that can be modelled by a Gaussian functions in all three dimensions. The universal dependencies of the hole energy, g -factor and localization length on a quantum dot barrier height, as well as the ratio of effective masses of the light and heavy holes are presented for the spherical quantum dots. The splitting of the four-fold degenerate ground state into two doublets is derived for anisotropic (oblate or prolate) quantum dots. Variational calculations are combined with numerical ones in the framework of the Luttinger Hamiltonian. Constructed trial functions are optimized by comparison with the numerical results. The effective hole g -factor is found to be independent on the quantum dot size and barrier height and is approximated by simple universal expression depending only on the effective mass parameters. The results can be used for interpreting and analyzing experimental spectra measured in various structures with the quantum dots of different semiconductor materials.

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Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures

Cited by 8 publications

References 127 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles

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