Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlattices

Abstract

We have investigated the epitaxial growth of Zn1−x CdxSe epilayers and ZnSe/Zn1−x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn1−x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1−x CdxSe is in the form of thin layers within ZnSe/Zn1−x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.

Structural and optical properties of electrodeposited Cd0.7Zn0.3Se thin films: Effect of annealing

“…Although the syntheses of (CdZn)Se thin films have been carried out by many workers by different techniques [12][13][14][15], there are very few reports in the literature on the effect of annealing of (CdZn)Se thin films. It is therefore worthwhile to study the effect of annealing on the physical properties of (CdZn)Se thin films.…”

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

“…We have prepared Cd 1−x Zn x Se films by the resistive thermal evaporation technique with various zinc content. Cd 1−x Zn x Se thin films have been studied by many researchers [1,[10][11][12], but the effect of annealing temperature on the optical properties of Cd 1−x Zn x Se thin films is rarely presented in the literature. Therefore, it is worthwhile to study the effect of annealing on optical properties of Cd 1−x Zn x Se thin films.…”

Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

“…The E Γ data can be approximated by the following quadratic equation, E Γ = 2.24(1-x) +4.1 x +0.1 x(x-1). We note that the bowing parameter for BeZnTe alloys is 0.1 eV, which is about one third that of ZnCdSe alloy (0.26 eV) [41]. The direct bandgap of BeZnTe, when the lattice parameter is matched to InP (i.e., x = 0.48), is predicted to be 3.1 eV.…”