Molecular design of fullerene‐based ultralow‐k dielectrics

Abstract

This paper presents results of a theoretical study of hypothetical insulating layers for semi-conducting circuits. The dielectric material consists of C 60 fullerenes interconnected by bridge molecules. The structural optimisation is carried out using quantum-chemical methods. The predicted materials have ultralow values of the static dielectric constant of about 1 5 k = . and good elastic bulk moduli of 12 B = to 17 GPa. These values meet the demands of future microelectronic devices.

A Highly‐Ordered 3D Covalent Fullerene Framework

“…In contrast to this, theoretical studies predict that with a network of fullerene cores connected by various linkers ultra-low k values, even below 2, can be achieved. [ 19 ] The structure of the linking side chains we used is more complex than the ones used for the calculations, which were shorter and sometimes only alkyl chains. We assume that the higher content of C=O and Si=O bonds present in our precursor yields a higher polarizability and lower porosity and therefore a higher dielectric constant.…”

The properties (rheological, dielectric, and mechanical) and microtopography of spherical fullerene‐filled poly(arylene ether nitrile) nanocomposites

“…The dielectric constant of the pure PEN is 3.51. 6,30 The dielectric constant of air was 1.00, so the hollow cage structure of the fullerene was the main reason of the reduction of dielectric constants 9,10,15,29 while the increase of dielectric constants may be attributed to the partial fullerene aggregation. Then, as fullerene loading goes, the dielectric constant of the PEN/fullerene nanocomposites increased and became stable.…”

“…This result is different from polymer/GN and polymer/CNT systems, for which the regulation of dielectric constant at high frequency is different from that at low frequency. 6,30 The dielectric constant of air was 1.00, so the hollow cage structure of the fullerene was the main reason of the reduction of dielectric constants 9,10,15,29 while the increase of dielectric constants may be attributed to the partial fullerene aggregation. Figure 7(c) gives the dielectric loss tangent value (tan d) of PEN/fullerene nanocomposites at 1 K and 25 C. It can be seen that the tan d is in the range from 0.001 to 0.007.…”

“…Numerous studies have indicated that CNT and GN are surely ideal fillers to prepare high dielectric constant polymer materials. 9,10 However, there is little report on the rheological properties of polymer/fullerene systems. For example, Fan et al found the rheological percolation threshold for PVDF/GN nanocomposites is 0.0018 vol % smaller than the dielectric transaction value (0.0177 vol %).…”

“…8 On the contrary, zero-dimensional fullerene with a special hollow cage structure can be used to prepare low dielectric constant materials. 9,10 However, there is little report on the rheological properties of polymer/fullerene systems. Thus, it should be studied to understand the filler effect of zerodimensional fullerene in polymer matrix and to further expand the application of polymer/fullerene nanocomposites.…”