2006
DOI: 10.1016/j.nimb.2006.08.003
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Molecular dynamic simulation on boron cluster implantation for shallow junction formation

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Cited by 10 publications
(4 citation statements)
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“…46 This substantial increase in the rate of deposition provides an opportunity for soft landing of massselected ions to enter the manufacturing of high-value components such as solar cells 47 and shallow junctions in integrated circuits. 48 High capacity plasma-based processes that operate at ambient pressure and elevated temperatures are currently used in the large scale industrial production of bare nanopowders. 49 These commercial techniques employ both liquid and solid precursors and are capable of preparing from gram to kilogram quantities of bare nanopowders per hour.…”
Section: Introductionmentioning
confidence: 99%
“…46 This substantial increase in the rate of deposition provides an opportunity for soft landing of massselected ions to enter the manufacturing of high-value components such as solar cells 47 and shallow junctions in integrated circuits. 48 High capacity plasma-based processes that operate at ambient pressure and elevated temperatures are currently used in the large scale industrial production of bare nanopowders. 49 These commercial techniques employ both liquid and solid precursors and are capable of preparing from gram to kilogram quantities of bare nanopowders per hour.…”
Section: Introductionmentioning
confidence: 99%
“…An additional coulomb function [4] is used to describe the effect of polarization field in III-nitride materials. The covalent bonds between group-III atoms and N atoms are simulated by ZBL-SW potential function [5].…”
Section: Model Setup and Resultsmentioning
confidence: 99%
“…In addition, a new “matrix assembly cluster source” has been introduced by Palmer and coworkers with the potential for scale up to produce milliamps of current . This substantial increase in deposition rate provides an unparalleled opportunity for SL of mass-selected ions to enter the manufacturing of high-value components including solar cells, shallow junctions in integrated circuits, and energy-storage devices …”
Section: Rational Design Of Interfaces Using Ion Soft Landingmentioning
confidence: 99%