Molecular Dynamics Simulation of Grain Growth of Cu Film —Effects of Adhesion Strength between Substrate and Cu Atoms—

Abstract

The growth process of Cu polycrystal films on Si, Ti, W and Ru substrate during isothermal annealing was studied by the molecular dynamics method. We focused on the influence of the adhesion strength between substrate and Cu on crystallinity and orientational order of the film. After structural relaxation at low temperature (50 K), the movements of individual Cu atoms were calculated for different annealing temperatures using the molecular dynamics method. The crystallinity and orientational order of the film were examined by 2D-Fourier transformation of the atomic structure. We found that the system with strong adhesion strength between substrate and Cu showed higher crystallinity and orientational order for (111) oriented Cu film.

Effects of CuO on constrained sintering of a polycrystalline TiO2 ceramics

“…where D 0 , α, and r 0 are the potential parameters describing the dissociation energy of the ion pairs. The potential parameters of Cu‐Ti pair are shown in Table . A short‐range cut‐off distance of 12 Å was used for all non‐Coulombic parts of the Buckingham potential.…”

Supercritical fluid chemical deposition of Cu in Ru and TiN-lined deep nanotrenches using a new Cu(I) amidinate precursor

“…In addition, Cu diffusion into the Ru, which was confirmed by the EDS maps, resulted in a further increase in the adhesion strength. The use of our non-fluorinated [Cu(DIPPA)] 2 precursor dramatically improves the adhesion strength of the Cu film to more than 1000 mN, which meets the adhesion strength required by microelectronic interconnects [27]. Fig.…”