2015
DOI: 10.1039/c5ra15878h
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Molecular dynamics simulation of the slip systems in VN

Abstract: We calculate the generalized stacking fault energies along different slip directions in various slip planes of VN and found that the 〈110〉 directions show the lowest maximum stacking fault energies.

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Cited by 31 publications
(9 citation statements)
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“…3(a), which has also been reported in the nanoindentation simulations with a spherical indenter 38, 49 or in the case involving large deformation with a cylindrical indenter 18 . To understand the mechanism for these minor platforms, the microstructures of XSC at different depths are shown in Fig.…”
Section: Resultssupporting
confidence: 70%
“…3(a), which has also been reported in the nanoindentation simulations with a spherical indenter 38, 49 or in the case involving large deformation with a cylindrical indenter 18 . To understand the mechanism for these minor platforms, the microstructures of XSC at different depths are shown in Fig.…”
Section: Resultssupporting
confidence: 70%
“…These energy barriers are related to many factors, such as phase transition, crystal growth, plastic deformation, dislocation glides and twin interactions. [34][35][36] Fig . 7 shows the GSF energies of the two kinds of interfaces with displacements along <110> and <112> directions, in which the GSF energies of bulk diamond and c-BN are also presented for comparison.…”
Section: Gsf Energies Of Interfacesmentioning
confidence: 99%
“…Then, the sample is relaxed at 10 K using a Nose-Hoover (NPT) thermostat for 40 ps to reach a thermal equilibrium state. To our knowledge [ 30 , 31 , 32 , 33 , 34 ], the relaxation time of 40 ps is sufficiently long for a sample to an equilibration state. For example, Fu et al [ 33 ] relaxed the nanotwinned vanadium nitride at T = 300 K for 30 ps.…”
Section: Methodsmentioning
confidence: 99%